1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers

Hashimoto, Junichi; Koyama, Kenji; Katsuyama, T.; Tsuji, Yasuhidé; Fujii, Keiji; Yamazaki, K.; Ishida, Akira

doi:10.1143/jjap.45.1635

Cited by 7 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is evident that the ASE peak gain power level is less sensitive for the GaAs material (-0.11 dB/°K) compared to InP material (-0.17 dB/°K). The reported results reveal the enhanced thermal stability of the dilute nitride material at 1.55 m, being in line with previously reported results from 1.3 m SOA devices [13]. The 3-dB bandwidth of the spectral gain profile was broadened from ~65 nm at 15°C to ~76 nm at 55°C for the GaAs SOA.…”

Section: B Spectral Gain Characteristics Vs Temperaturesupporting

confidence: 91%

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

Giannoulis

Iliadis

Apostolopoulos

et al. 2015

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

View full text Add to dashboard Cite

The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.

show abstract

Section: B Spectral Gain Characteristics Vs Temperaturesupporting

confidence: 91%

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

Giannoulis

Iliadis

Apostolopoulos

et al. 2015

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

View full text Add to dashboard Cite

show abstract

“…However from the highlighted signal gain plot in Fig. 11, at the optical input of −20 dBm, only three out of the eight channels (B, C and F) have gain in the range of 10-15 dB with channel C being the highest (13.7 dB) These linear gain values are comparable to those reported for a GaInNAs QW SOA [23]. Channel D and E lie between the resonant frequencies of the QW and the QD-like fluctuations so that they can be amplified through both material gain.…”

Section: Multi-channel Amplificationsupporting

confidence: 64%

Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

Sun

Vogiatzis

Rorison

2013

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Analysis of the broadband gain of a GaInNAs single quantum well (QW) semiconductor optical amplifier (SOA) is developed considering the tuneability of the gain in detail. The SOA is analyzed as a single device multiwavelength channel amplifier in a wavelength-division-multiplexing (WDM) network. The gain model includes the QW material gain derived using a band anti-crossing model and includes quantum dot (QD) fluctuations in the conduction band arising from compositional fluctuations of N within the QW. The material gain is broadened by adding the gain of the QD-like fluctuations and the QW confined level. Simultaneous amplification of two optical signals is analyzed, one at the peak of the QW gain and one at the peak of the QD distribution gain, and the linear and nonlinear regions are established. In addition, multi-channel signal amplification, appropriate for WDM applications, has been modeled across the frequency range of the QW and the QD-like fluctuations and no wavelength degradation between the channels was observed demonstrating the potential of dilute nitride QW as multiwavelength SOAs at optical communications wavelengths.

show abstract

“…Fig. 6 shows the cross-sectional views of the SOA and the passive waveguide, since the built-in potential at the p-n junction of the GaInP cladding layer (about 1.9 eV) is much higher than that at the GaInNAs (Gallium Indium Nitrides) active region (about 0.95 eV), the current can be confined effectively in the active region even without an additional current blocking layer [16].…”

Section: Fabrication Technologymentioning

confidence: 99%

Proposed Photonic Integrated Circuit For Photonic Networks

M. Hassan

2010

ETJ

View full text Add to dashboard Cite

Optical technologies have great potential for the implementation of high-speed systems due to their potential for a decrease in size, weight and power consumption and an increase in speed, capacity, bandwidth and integration degree. In this paper a study for the Integrated Photonics properties versus Integrated Electronics had been presented, different types of photonic components are maintained, the fabrication technology is explained using the Encoder/Correlator on GaAs-Based Photonic Integrated Circuit for Photonic Networks, various limits and challenges are discussed, different suggestion are discussed for the future.

show abstract

1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers

Cited by 7 publications

References 16 publications

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations

Proposed Photonic Integrated Circuit For Photonic Networks

Contact Info

Product

Resources

About