2021
DOI: 10.1109/tpel.2021.3082640
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1.37 kV/12 A NiO/β-Ga2O3Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

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Cited by 103 publications
(67 citation statements)
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“…Benchmarking against all other state-of-the-art representative diodes, including SiC SBDs/JBS diodes/PN diodes and GaN SBDs/PN diodes with extracted R on,sp at a fixed V F = 3 V, our Ga 2 O 3 HJ PN diodes achieve a record of nowadays power diodes, as compared in Fig. 5b 33 , 45 – 53 . Even under the real application circumstance, the P-FOM = BV 2 / R on,sp of the Ga 2 O 3 power diodes still surpasses the 1-D unipolar limit of the SiC.…”
Section: Resultsmentioning
confidence: 98%
“…Benchmarking against all other state-of-the-art representative diodes, including SiC SBDs/JBS diodes/PN diodes and GaN SBDs/PN diodes with extracted R on,sp at a fixed V F = 3 V, our Ga 2 O 3 HJ PN diodes achieve a record of nowadays power diodes, as compared in Fig. 5b 33 , 45 – 53 . Even under the real application circumstance, the P-FOM = BV 2 / R on,sp of the Ga 2 O 3 power diodes still surpasses the 1-D unipolar limit of the SiC.…”
Section: Resultsmentioning
confidence: 98%
“…A double-pulse test (DPT) circuit was designed to evaluate the switching performance of Ga2O3 SBD [39,[49][50][51][52]. The schematic of DPT circuit and its switching process are shown in Fig.…”
Section: Switching Performance Of Devicementioning
confidence: 99%
“…To address this issue, numerous researchers have used p-type semiconductor oxides such as NiO, Cu 2 O, Ir 2 O 3 , and others to integrate p–n heterojunctions based on Ga 2 O 3 , which is a promising technique for producing high-performance photodetectors and power electronic devices. Breakdown voltages greater than 1 kV have been reported using the p–n heterojunction method. …”
Section: Introductionmentioning
confidence: 99%