In this Letter, we report a high-performance NiO/β-Ga2O3 pn heterojunction diode with an optimized interface by annealing. The electrical characteristics of the pn diode without annealing (PND) and with annealing (APND) are studied systematically. The APND device has a lower specific on-resistance of 4.1 mΩ cm2, compared to that of the PND, 5.4 mΩ cm2. Moreover, for the APND, a high breakdown voltage of 1630 V with lower leakage current is achieved, which is 730 V higher than that of the PND. The enhanced electrical performance of the APND leads to a record high power figure of merit of 0.65 GW/cm2 in Ga2O3-based pn diodes, which is among the best reported results in Ga2O3 power devices. In addition, the interface trap density of the diode decreases from 1.04 × 1012 to 1.33 × 1011 eV−1 cm−2 after annealing, contributing to much lower hysteresis. Simultaneously, the ideality factor n for the APND is steady at elevated temperatures due to the stable interface. The results of C−V characteristics reveal the bulk defects inside the nickel oxide film grown by sputtering, which are calculated by high- and low-frequency capacitance methods. X-ray photoelectron spectroscopy of NiO illustrates the reasons for the changes in the concentration of holes and defects in the film before and after annealing. This work paves the way for further improving the performance of Ga2O3 diode via interface engineering.

This paper describes the results of a study of a few design parameters influencing the performance of sensor arrays constructed from nanostructured thin films and interdigitated microelectrodes (IMEs). The nanostructured thin films on the IME devices were prepared from nonanedithiol (NDT) and mercaptoundecanoic acid (MUA) linked assemblies of 2-nm sized gold nanoparticles. The sensor array data in response to volatile organic compounds were collected and analyzed using fractional factorial experimental design and analysis of variance for understanding effects of the design parameters on the sensitivity. While the smaller value for the microelectrode space, width, and length generally led to higher response sensitivity, a strong dependence on the nature of the nanostructured thin films was found. The microelectrode space was the most important design parameter for NDT-based thin films. However, the microelectrode space, width, and length were found to play almost equally important roles for MUA-based thin films. The principal component analysis results for classification performances of the arrays consisting of a set of thin films have demonstrated the possibility of optimizing sensor arrays by appropriate selections of microelectrode parameters and nanostructured sensing films.

No abstract

No abstract

No abstract