Toward emerging gallium oxide semiconductors: A roadmap

Yuan, Yuan; Hao, Weibing; Mu, Wenxiang; Wang, Zhengpeng; Chen, Xuanhu; Liu, Qi; Xu, Guangwei; Wang, Chenlu; Zhou, Hong; Zou, Yanni; Zhao, Xiaolong; Jia, Zhitai; Ye, Jiandong; Zhang, Jincheng; Long, Shibing; Tao, Xutang; Rong, Zhang; Hao, Yue

doi:10.1016/j.fmre.2021.11.002

Cited by 91 publications

(41 citation statements)

References 249 publications

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“…Furthermore, polarization-sensitive narrow-band PDs based on GaN, Ga 2 O 3 , and ZnO materials have also been reported by utilizing the anisotropic optical properties. − Chen et al present Ga 2 O 3 -based, solar-blind, narrow-band PDs by light polarization of the anisotropic transitions in Ga 2 O 3 . The GaN-based, ultraviolet narrow-band PDs have also been investigated by utilizing the asymmetry of valence band structures and the interband transition orders. − Unfortunately, it still suffers from low responsivity and complicated optical system design, which limit the application as narrow-band PDs.…”

Section: Introductionsupporting

confidence: 91%

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Tang

Jiang

et al. 2021

ACS Appl. Electron. Mater.

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Ultraviolet photodetectors have demonstrated a wide range of applications, e.g., missile launching, tracking detection, environmental monitoring, etc. This Article presents an ultraviolet photodetector based on a Ga2O3/GaN heterostructure that is equipped with tunable multiband detectivity via bias voltage and a record ultranarrow response. Particularly, this spectral response can be tuned from ultraviolet-C to ultraviolet-A by modulating the depletion region of the photodetector via adjusting bias. Under a higher bias, a photoresponse with a full-width at half-maximum of ∼4 nm at 363 nm is achieved. This ultranarrow response reaches 2.58 × 103 A/W and an external quantum efficiency of (8.84 × 105)% under 28 V bias. The photoluminescence, photoluminescence excitation, and light-absorption measurements suggest that this ultranarrow-band detectivity can be ascribed to the field-enhanced exciton ionization process in the GaN layer. The high responsivity can be attributed to the internal gain of the photodetector originating from the relatively large valence band offset between the Ga2O3 and GaN layers. This work provides a promising approach to the development of high-performance and versatile multiband ultraviolet photodetectors with electrical tunability. It is also worth highlighting that the features of inexpensive manufacturing and easy scalability are particularly attractive for mass production.

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Section: Introductionsupporting

confidence: 91%

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Tang

Jiang

et al. 2021

ACS Appl. Electron. Mater.

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“…The number of valence electrons of N is one less than that of O, and the radius of N 3- is close to that of O 2 − . The lattice distortion degree caused by the addition of N is small.…”

Section: Effects Of Defects and Impurities On Electronic Propertiesmentioning

confidence: 83%

“…1. 1–5 The literature on Ga 2 O 3 exploded in the beginning of this century. Ga 2 O 3 possesses many superior characteristics compared with other foregone semiconductors ( e.g.…”

Section: Introductionmentioning

confidence: 99%

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

Wang

Lin

et al. 2022

J. Mater. Chem. C

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“…Because of the prominence of Ga 2 O 3 , its characteristics and applications have been addressed in several references. ,,,,,− This review mainly focuses on metal contacts with β-phase gallium oxide. Following a brief introduction to the physics of metal–semiconductor contacts (MS), the literature on ohmic and Schottky contacts (SCs) on β-Ga 2 O 3 has been reviewed.…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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Toward emerging gallium oxide semiconductors: A roadmap

Cited by 91 publications

References 249 publications

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

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Toward emerging gallium oxide semiconductors: A roadmap

Cited by 91 publications

References 249 publications

Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Recent progress on the effects of impurities and defects on the properties of Ga2O3

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Contact Info

Product

Resources

About

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Ga₂O₃/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

Recent progress on the effects of impurities and defects on the properties of Ga₂O₃

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications