Enhancement in the light interaction between plasmonic nanoparticles (NPs) and semiconductors is a promising way to enhance the performance of optoelectronic devices beyond the conventional limit. In this work, we demonstrated improved performance of Ga2O3 solar-blind photodetectors (PDs) by the decoration of Rh metal nanoparticles (NPs). Integrated with Rh NPs on oxidized Ga2O3 surface, the resultant device exhibits a reduced dark current of about 10 pA, an obvious enhancement in peak responsivity of 2.76 A/W at around 255 nm, relatively fast response and recovery decay times of 1.76 ms/0.80 ms and thus a high detectivity of ∼1013 Jones. Simultaneously, the photoresponsivity above 290 nm wavelength decreases significantly with improved rejection ratio between ultraviolet A (UVA) and ultraviolet B (UVB) regions, indicative of enhanced wavelength detecting selectivity. The plasmonic resonance features observed in transmittance spectra are consistent with the finite difference time-domain (FDTD) calculations. This agreement indicates that the enhanced electric field strength induced by the localized surface plasmon resonance is responsible for the enhanced absorption and photoresponsivity. The formed localized Schottky barrier at the interface of Rh/Ga2O3 will deplete the carriers at the Ga2O3 surface and lead to the remarkable reduced dark current and thus improve the detectivity. These findings provide direct evidence for Rh plasmonic enhancement in solar-blind spectral region, offering an alternative pathway for the rational design of high-performance solar-blind PDs.

While conventional microelectronic integrated circuits based on electron charges approach the theoretical limitations in foreseeable future, next-generation nonvolatile logic units based on electron spins have the potential to build logic networks of low power consumption. Central to this spin-based architecture is the development of a paradigm for in-memory computing with magnetic logic units. Here, we demonstrate the basic function of a transistor logic unit with patterned Y-shaped NiFe nanowires by gate-controlled domain-wall pinning and depinning. This spin-based architecture possesses the critical functionalities of transistors and can achieve a programmable logic gate by using only one Y-shaped nanostructure, which represents a universal design currently lacking for in-memory computing.

The magnetic skyrmionium can be seen as a coalition of two magnetic skyrmions with opposite topological charges and has potential applications in next-generation spintronic devices. Here, we report the current-driven dynamics of a skyrmionium in a ferromagnetic nanotrack with the voltage-controlled magnetic anisotropy. The pinning and depinning of a skyrmionium controlled by the voltage gate are investigated. The current-driven skyrmionium can be used to mimic the skyrmionium diode effect in the nanotrack with a voltage gate. We have further studied the skyrmionium dynamics in the nanotrack driven by a magnetic anisotropy gradient in the absence of spin current. The performance of a single wedge-shaped voltage gate at different temperatures is studied. Our results may provide useful guidelines for the design of voltage-controlled and skyrmionium-based spintronic devices.