1.42 µm continuous-wave operation of GaInNAs laser diodes

Gollub, D.; Moses, S. E. Allen; Fischer, M.; Forchel, A.

doi:10.1049/el:20030532

Cited by 30 publications

(9 citation statements)

References 12 publications

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“…The CW slope efficiency was 0.34 W=A, corresponding to a 40% external quantum efficiency. To the best of our knowledge, these are the best threshold current density and efficiency data ever reported for a dilute-nitride laser in this wavelength range [6,7]. Additionally, devices showed maximum CW output powers of $30 mW before thermal rollover and pulsed output powers (5 ms pulse and 1% duty cycle) as high as 300 mW.…”

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confidence: 74%

“…1), these devices are more temperature sensitive. The characteristic temperature (T o ) under pulsed conditions was 62K as measured from 25 to 60 C. This is likely due to reduced electron confinement in GaInNAsSb=GaNAs structures as compared to GaInNAs=GaAs [6].…”

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confidence: 99%

“…Recent results from several groups have shown extremely low threshold edge-emitting lasers and high-performance VCSELs in the 1.3 mm range [3,4]. While there has been considerable effort on growth of higher indium and nitrogen content alloys to decrease further the bandgap for 1.55 mm devices [5][6][7], state-ofthe-art edge-emitting lasers show rapidly increasing threshold with wavelength. Results for GaInNAs(Sb) lasers between 1.2 and 1.5 mm are summarised in Fig.…”

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confidence: 99%

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Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm

et al. 2003

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confidence: 74%

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confidence: 99%

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Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm

et al. 2003

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“…GaInNAs(Sb) edge-emitting lasers [1][2][3][4][5][6][7][8][9][10], vertical-cavity surface-emitting lasers (VCSEL) [11][12][13][14][15], and distributed feedback (DFB) lasers [16][17], grown monolithically on GaAs, have been demonstrated throughout the 1.2-1.6µm telecommunication bandwidth. They have several advantages over InP based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, higher index contrast which decreases the necessary number of mirror pairs in distributed Bragg reflectors (DBRs) for VCSELs, native oxide apertures for current confinement, and lower cost wafers.…”

Section: Introductionmentioning

confidence: 99%

High-performance GaInNAsSb/GaAs lasers at 1.5 um

Goddard

Bank

Wistey

et al. 2005

Novel in-Plane Semiconductor Lasers IV

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We achieved 1.5-µm CW SQW GaInNAsSb lasers with GaNAs barriers grown by MBE on GaAs substrates with typical room temperature threshold densities below 600A/cm 2 , external quantum efficiencies above 50%, and output powers exceeding 200mW from both facets for 20x1222µm devices tested epitaxial-side up. In pulsed mode, 450A/cm 2 , 50%, and 1100mW were realized. Longer devices yielded over 425mW of total CW power and thresholds below 450A/cm 2 . These results are comparable to high quality GaInNAs/GaAs lasers at 1.3µm. Z-parameter measurements revealed that these improvements in the performance metrics of approximately 40-60% over previous results are primarily due to reduced monomolecular recombination.The large differential gain of GaInNAsSb/GaNAs/GaAs lasers at 1.5µm of approximately 1.2x10 -15 cm 2 was mostly squandered in previous devices due to large quantities of monomolecular recombination. The characteristic temperatures for threshold current, T 0 , and for efficiency, T 1 , were 66K and 132K, respectively. These reduced values, compared to prior measurements of 106K and 208K, respectively, indicate carrier leakage. Since monomolecular recombination is temperature insensitive, the temperature stability of device operation was adversely affected.

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“…Up to now, QDs are most widely studied in the GaAsbased materials system, and InAs/ GaAs QD lasers have been realized in the 1.3 m wavelength region 4,5 and close to 1.55 m with metamorphic QDs, 6 which was also achieved by dilute-N GaInNAs and GaInNAsSb quantum wells ͑QWs͒. 7,8 On the other hand, the InP-based materials system easily covers the full range of optical-networking wavelengths dominant for photonic devices in the 1.55 m wavelength region employing bulk and QW active regions. Moreover, it is ideally suited for monolithic photonic integration, supporting all key optical functions, including lasers, SOAs, phase modulators, detectors, and passive waveguides on a single chip.…”

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confidence: 99%

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Anantathanasarn

Nötzel

Veldhoven

et al. 2006

Applied Physics Letters

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The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control of the InAs QDs in an InGaAsP∕InP waveguide is based on the suppression of As∕P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580A∕cm2 and low transparency current density of 6A∕cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.

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1.42 µm continuous-wave operation of GaInNAs laser diodes

Cited by 30 publications

References 12 publications

Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm

Low-threshold CW GaInNAsSb/GaAs laser at 1.49 µm

High-performance GaInNAsSb/GaAs lasers at 1.5 um

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

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