Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Abstract

The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control of the InAs QDs in an InGaAsP∕InP waveguide is based on the suppression of As∕P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580A∕cm2 and low transparency current density of 6A∕cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.

Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer

“…One class of applications includes lasers and semiconductor optical amplifiers where excellent performance has been reported. [1][2][3] These devices require a high QD density to provide gain. The other class of applications requires low density QDs when the device operation is based on single QDs, which have to be isolated such as for single photon sources in quantum information systems.…”

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

“…Лазеры с КТ на подложках InP являются перспективными приборами для использова-ния в телекоммуникационных системах с длиной волны генерации около 1.5 мкм (например, C-диапазону опти-ческой связи соответствуют длины волн 1530−1565 нм). КТ InAs, излучающие в необходимом спектральном диапазоне, могут быть синтезированы как методом молекулярно-пучковой эпитаксии (МПЭ) [7], так и газо-фазной эпитаксии из металлоорганических соединений (ГФЭ МОС) [8].…”

Recent Advances in Long Wavelength Quantum Dot Lasers and Amplifiers

“…Device parameters for as-cleaved shallow etched FP lasers with 3.5-µm waveguide width are: 125 mA threshold current for 1-mm cavity length, 6 A/cm 2 transparency current density per QD layer, 4.2 cm -1 internal optical loss, 37 % internal differential quantum efficiency, 15 cm -1 maximum QD GS modal gain, and 80 nm 3 dB gain bandwidth [2]. The deep etched FP lasers with 1.65 µm waveguide width exhibit the same threshold current as shallow etched lasers due to the zerodimensional carrier confinement inhibiting non-radiative sidewall recombination (Fig.…”