Conference on Lasers and Electro-Optics 2020
DOI: 10.1364/cleo_si.2020.sm3r.5
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1.5-Gbit/s Filter-free Optical Communication Link based on Wavelength-selective Semipolar ( 20 21 ¯ ) InGaN/GaN Micro-photodetector

Abstract: We report on wavelength-selective semipolar (2021) InGaN/GaN micro-photodetector with broad modulation bandwidth of 293.52 MHz, outperforming polar-based devices. A 1.5-Gbit/s data rate was achieved without the need of spectral-efficient modulation format.

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Cited by 2 publications
(2 citation statements)
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“…In terms of detector research. In 2020 [16] , the Laboratory of Photonics at King Abdullah University of Science and Technology (KAUST) in the Kingdom of Saudi Arabia reported a wavelength-selective semi-polar InGaN/GaN microphoto detector with a bandwidth of 293.52 MHz, the data rate of 1.5 Gbps was achieved without the need for a frequencyefficient modulation format. In 2022 [17] , the University of Edinburgh in the U.K. improved the sensitivity of visible optical communication by using single-photon avalanche diode (SPAD) arrays.…”
Section: Research On New Light Sources and Sensitive Detectorsmentioning
confidence: 99%
“…In terms of detector research. In 2020 [16] , the Laboratory of Photonics at King Abdullah University of Science and Technology (KAUST) in the Kingdom of Saudi Arabia reported a wavelength-selective semi-polar InGaN/GaN microphoto detector with a bandwidth of 293.52 MHz, the data rate of 1.5 Gbps was achieved without the need for a frequencyefficient modulation format. In 2022 [17] , the University of Edinburgh in the U.K. improved the sensitivity of visible optical communication by using single-photon avalanche diode (SPAD) arrays.…”
Section: Research On New Light Sources and Sensitive Detectorsmentioning
confidence: 99%
“…The emergence of highly integrated silicon-based photonic platforms has led to extensive applications in the semiconductor and telecommunications industries. However, despite allowing large-volume manufacturing at relatively low cost, the energy bandgap located near 1.14 eV hinders the integration of devices requiring optical transparency in the ultraviolet (UV) and visible regimes, such as visible-light and deep-UV (DUV) photodetectors, [1][2][3][4] group-III-V-based lightemitting diodes, [5][6][7][8] solar cells, 9 electro-absorption modulators, [10][11][12] and transparent thin-film transistors. [13][14][15] Despite significant efforts to realize the heterogeneous integration of the aforementioned devices on silicon-based platforms, [16][17][18][19] challenges related to high defect densities, optical coupling, wafer bonding, and substrate removal remain critical and can lead to consequential overhead production costs.…”
Section: Introductionmentioning
confidence: 99%