1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors

Abstract

In this paper, we report the first demonstration of microwave power performance of InAlAs/InGaAs double heterojunction bipolar transistors (DHBTs) obtained at an extremely low operating voltage of 1.5 V. In order to obtain a high output power (P out) at a low operating voltage, we used DHBTs rather than single heterojunction bipolar transistors (SHBTs) and thus reduced the offset voltage (V CE,offset). We obtained a much lower V CE,offset of 50 mV for the DHBT than that of 300 mV for a SHBT. At a low operation voltage of 1.5 V, the DHBT exhibited a P out of 20.6 dBm with a power added efficiency (η add) of 36.6% and a power gain (G a) of 8.5 dB biased for class-B operation at 1.9 GHz. The high-speed performance of the DHBT are a unity cutoff frequency (f T) of 76 GHz and a maximum oscillation frequency (f max) of 157 GHz. We also studied the reliability of DHBTs by conducting a 1000-hour accelerated life test. The InGaAs HBTs had a lifetime of 2×106 h at a junction temperature of 125°C with an activation energy of 0.95 eV.

Crystal growth of SmxY1−xCa4O(BO3)3 for piezoelectric applications at high temperature

“…Oxyborate crystals have been studied for optical applications due to their outstanding nonlinear optical properties. 17–23 Because of their high temperature stability, large piezoelectric coefficient and high resistivity at high temperature, RECOB crystals, such as ErCOB, YCOB, GdCOB, SmCOB, NdCOB, PrCOB, LaCOB, TmCOB, and HoCOB, 24–41 are becoming new potential materials for ultrahigh-temperature piezoelectric devices. Among the previously reported RECOB-family crystals, YCOB and ErCOB were found to exhibit the highest resistivity; one to three orders of magnitude higher than that of langasite-type crystals.…”

RF performance of a novel all ternary InAlAs\InGaAs DHBT

“…The discontinuity causes a problem known as current blocking. Research into current blocking [12,13] has demonstrated that the use of quaternary InAlGaAs collector, super-lattice and/or compositional grading at the hetero-junction yields improvements. In most cases the current blocking can only be eliminated via the use of quaternary alloys, which invariably compromises the breakdown characteristics.…”

“…In most cases the current blocking can only be eliminated via the use of quaternary alloys, which invariably compromises the breakdown characteristics. Quaternary and graded collector InAlAs DHBTs have shown promise in device performance and have shown f t and f max of 76 and 157 GHz, respectively, and BV ceo of 3 V for a device size of 1 × 20 μm 2 [12,14].…”

InGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications

“…The highest MAX with the lowest current density reported is 50 GHz at 6 . 7~1 0~ A/crn2 on a 15 pm2 emitter, corresponding to a current level of 100 pA [2].…”