1.55 /spl mu/m polarisation independent semiconductor optical amplifier with 25 dB fiber to fiber gain

All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers

“…As an example, Fig. 2 gives the relative AM responses for the output signals at and , respectively, using a M-DCPBH SOA [44]. The converted signal exhibits a low-pass characteristic with a 3-dB modulation bandwidth of 12 GHz while the amplified input signal clearly exhibits a high-pass filter characteristic.…”

High-speed optical signal processing using semiconductor optical amplifiers

“…The operation wavelength of SOAs for applications in optical telecommunications is generally around 1.3 or 1.55 μm [9][10][11][12][13][14][15]. The structure of the active region can be either bulk, multi-quantumwell (MQW) or quantum-dot (QD).…”

Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

“…The valence band edges of the strained layers are obtained from the model solid theory taking into account the strain deformation potential10. The linear electronic susceptibility of a strained QW can be derived using the density matrix formalism'1 as (1) Here, r is the electron spin state, 1 and m are the subband indices for conduction and valence bands, respectively, is the polarization vector of the optical field, is the permittivity of free space, is the optical dipole matrix element between the /th subband in the conduction band with a spin state y and the mth subband in the valence band of 2x2 Hamiltonian If, where cjU or L refer to the upper or the lower elements of 4x4 Hamiltonian. J and fhmaare the Fermi-Dirac occupation probabilities of electrons and holes in the lth conduction band and mth valence subband of energy of Ei'(k1) and E(k11) are the energies for the lth subband in the conduction band and the mth subband in the valence band of If at k11.…”