$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

Steckel, Jonathan S.; Josse, E.; Pattantyus-Abraham, Andras G.; Bidaud, M.; Mortini, Bénédicte; Bilgen, H.; Arnaud, O.; Allegret-Maret, S.; Saguin, F.; Mazet, Lucie; Lhostis, S.; Berger, T.; Haxaire, K.; Chapelon, L.L.; Parmigiani, L.; Gouraud, P.; Brihoum, M.; Bar, P.; Guillermet, M.; Favreau, S.; Duru, Romain; Fantuz, J.; Ricq, Stéphane; Ney, D.; Hammad, I.; Roy, D.; Arnaud, Arthur; Vianne, B.; Nayak, G.; Virollet, Nicolas; Farys, V.; Malinge, P.; Tournier, Arnaud; Lalanne, F.; Crocherie, Axel; Galvier, J.; Rabary, S.; Noblanc, O.; Wehbe-Alause, H.; Acharya, S.; Singh, Ajay; Meitzner, J.; Aher, D.; Yang, H.; Romero, J.; Chen, B.; Hsu, C.; Cheng, K. C.; Chang, Y.; Sarmiento, M.; Grange, C.; Mazaleyrat, E.; Rochereau, K.

doi:10.1109/iedm19574.2021.9720560

Cited by 42 publications

(37 citation statements)

References 2 publications

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“…As a representative detector, SWIR HgTe CQD trapping-mode detectors with a cutoff wavelength of 2.5 μm were fabricated and characterized. The first striking feature of the trapping-mode photodetector is the reduced darkcurrent density from 1.15 μA/mm 2 to 5.57 nA/mm 2 under a bias voltage of 2 V at room temperature (Figure e), which is in a similar order to the previously reported darkcurrent density of photovoltaic CQD imagers (33 nA/mm 2 under a bias voltage of ∼0.2 V at 25 °C, 2.5 nA/mm 2 ∼2 V at 60 °C). Compared with the reference detectors without the n-doped trapping layer, 2 to 3 orders of magnitude decreases were observed, and we attribute this to the induced built-in potential inside the trapping-mode photodetectors.…”

Section: Resultssupporting

confidence: 86%

Wafer-Scale Fabrication of CMOS-Compatible Trapping-Mode Infrared Imagers with Colloidal Quantum Dots

Zhang

Qin

et al. 2023

ACS Photonics

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Silicon-based complementary metal oxide semiconductor (CMOS) devices have dominated the technological revolution in the past decades. With increasing demands in machine vision, autonomous driving, and artificial intelligence, silicon CMOS imagers, as the major optical information input devices, face great challenges in spectral sensing ranges. In this paper, we demonstrate the development of CMOS-compatible infrared colloidal quantum-dot (CQD) imagers in the broadband short-wave and mid-wave infrared ranges (SWIR and MWIR, 1.5–5 μm). A new device architecture of trapping-mode detectors is proposed, fabricated, and demonstrated with lowered darkcurrents and improved responsivity. The CMOS-compatible fabrication process is completed with two-step sequential spin-coating processes of intrinsic and doped HgTe CQDs on an 8 in. CMOS readout wafer with photoresponse non-uniformity (PRNU) down to 4%, dead pixel rate of 0%, external quantum efficiency up to 175%, and detectivity as high as 2 × 1011 Jones for extended SWIR at 300 K and 8 × 1010 Jones for MWIR at 80 K. Both SWIR images and MWIR thermal images are demonstrated with great potential for semiconductor inspection, chemical identification, and temperature monitoring.

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Section: Resultssupporting

confidence: 86%

Wafer-Scale Fabrication of CMOS-Compatible Trapping-Mode Infrared Imagers with Colloidal Quantum Dots

Zhang

Qin

et al. 2023

ACS Photonics

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“…Following their use as light downconverters in displays and farming, nanocrystals are now being integrated into infrared cameras, − one of the first commercial applications in which the material is both electrically and optically active. So far, most reported cameras , are based on PbS nanocrystals and operate in the near-infrared and short-wave infrared. − ,− HgTe holds more promise for the design of longer wavelength sensors in the extended short-wave and midwave infrared. On the other hand, there are, to date, only a few reports of imaging based on this material. ,− …”

Section: Introductionmentioning

confidence: 99%

Material Perspective on HgTe Nanocrystal-Based Short-Wave Infrared Focal Plane Arrays

et al. 2022

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After the use of nanocrystals as light downconverters, infrared sensing appears to be one of the first market applications where they can be used while being both electrically and optically active. Over recent years, tremendous progress has been achieved, leading to an apparent rise in the technologicalreadiness level (TRL). So far, the efforts have been focused on PbS nanocrystals for operation in the near-infrared. Here, we focus on HgTe since its narrower band gap offers more flexibility to explore the extended short-wave and midwave infrared. We report a photoconductive strategy for the design of short-wave infrared focal plane arrays with enhanced image quality. An important aspect often swept under the rug at an early stage is the material stability. It appears that HgTe remains mostly unaffected by oxidation under air operation. The evaporation of Hg, a potentially dramatic aging process, only occurs at temperatures far beyond the focal plane array's standard working temperature. The main bottleneck appears to be the particle sintering resulting from joule heating of focal plane arrays. This suggests that a cooling system is required, whose first role is to prevent the material from sintering even before targeting dark current reduction.

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“…The difficulty of integrating nonsilicon materials into silicon-integrated circuits has greatly hindered the development of Si-CMOS imagers beyond visible light. Emerging materials, such as inorganic-organic metal halide perovskites [24][25][26][27][28], organic polymers [19,29,30], and colloidal quantum dots (CQDs) [12,14,[31][32][33][34][35][36][37], can avoid complex flip-chip bonding processes to reduce the detector production cost and increase the portability of FPA readout circuit detectors. It is hoped that these emerging optoelectronic materials will contribute to solving the problem brought by traditional bulk materials and promote the application of infrared imagers.…”

Section: Progress Of the Infrared Focal Plane Arraymentioning

confidence: 99%

CMOS-Compatible Optoelectronic Imagers

Liu²

2022

Coatings

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Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection, and atmospheric pollutant detection. Over the past several decades, the CMOS integrated circuits modified by traditional bulk semiconductor materials as sensitivity sensors for optoelectronic imagers have been used for infrared imaging. However, traditional bulk semiconductor material-based infrared imagers are synthesized by complicated molecular beam epitaxy, and they are generally coupled with expensive flip-chip-integrated circuits. Hence, high costs and complicated fabrication processes limit the development and popularization of infrared imagers. Emerging materials, such as inorganic–organic metal halide perovskites, organic polymers, and colloidal quantum dots, have become the current focus point for preparing CMOS-compatible optoelectronic imagers, as they can effectively decrease costs. However, these emerging materials also have some problems in coupling with readout integrated circuits and uniformity, which can influence the quality of imagers. The method regarding coupling processes may become a key point for future research directions. In the current review, recent research progress on emerging materials for infrared imagers is summarized.

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$1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

Cited by 42 publications

References 2 publications

Wafer-Scale Fabrication of CMOS-Compatible Trapping-Mode Infrared Imagers with Colloidal Quantum Dots

Wafer-Scale Fabrication of CMOS-Compatible Trapping-Mode Infrared Imagers with Colloidal Quantum Dots

Material Perspective on HgTe Nanocrystal-Based Short-Wave Infrared Focal Plane Arrays

CMOS-Compatible Optoelectronic Imagers

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