1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator

Abstract

The purpose of this work is to propose a methodology to compute 1/f noise in MOS transistors under cyclostationary operation using the standard BSIM4 noise model. The proposed technique relies on a transient simulation, prior to the noise simulation, in which the average carrier quasi Fermi level in the channel is computed. Using this average quasi Fermi level and an energy distribution of traps, flicker noise parameters-NOIA, NOIB and NOIC-are recalculated in order to account for cyclo-stationary conditions. With these recalculated parameters, a noise simulation, using standard BSIM4 noise model, is performed. Simulation results are presented and compared to experimental data available in the literature, indicating the validity of the method.