The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

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Variaus e nergeric particles in rh e space radia~ (íon environmenr C. 1.11 inreracr with silicon (Q cause undcsirable effects. When a single heavy ion strikes sili col1, ir loses irs energy by crea rin g frc e elcc rro n-hole pairs, resu]r ing in a dense ionized rrack in the local region. Protons and neurrons can cause nuclear imcracrions wh en pass ing through rhe material. The rccail a150 prod uces ionizar ian , which generates a tran sic nt current pulse (har can cau se an upset wh en ilHe rprered as a signal in eh e circuic. With technology sca ling imo deepsubmi cron dimens ions, the efreccs of energetic particle h its become a co nce rn even at sea levei, wh ere rhe major hi gh-e nergy radiarion source is atmospheric neurrons and prorons.A singlc partide can hit eirh er the sequentiaJ logic ar rhe combinarionallogic in th e silicon. When an energetic partide strikes one of a memory cell 's sens itive sires, the effect ca n produce an inversion in th e srored value-in oeher words, a bit Aip in rhe memory ceU. This is called a single-evem upset (SEU) .2 Whe n an energeri c particle hits a se nsitive site in rhe com bi national logic block, ir also generates a rransiem currem pulse. This phenomenon is called a single-evem rran sieIH (SET).3 ForPublished by the IEEE Computer Society combinational logi c bloc ks with reg istered outputs, the SET can evemually appear at rh e inpur of th e Aip-Aops placed at the com b inationallogic ourpurs, u nless t he induced rransie m pulse is e it he r 10gica1l y or electricall y masked by t he logic inpurs. If interpreted as a valid signal in che register inpU[, rhi s SET ca n cause an in co rrect valu e to be srored in th e register, provoking a soft crro r.Conrinuous rechno logy evo lu ri o n and small e r rransiswr featu res have made so ft errors on dev ices more frequ ento D etecein g soft e rrors in combinarional a nd sequentia l logic is criti cai for avoiding erro rs in the c ircuir applicarion. Howeve r, t his eas k is co mplex becau se the intern a i ci rcu ir signals a re decrcasing to che same order of magni tud e as the transienr currenrs,generated by cha rgedpartide strikes.Researchers have proposed a bu ilr-in currem senso r (BIC S) connected to t he powe r lines for moniroring on-chip current variati ons provoked by pcrmanent faules, such as stu ckar fallles, a nd by soft erro rs in memoryelements.-4,5 However, to rh e besr of our knowledge. no one has yer proposed a BI CSbased method for derecring SETs in combinafional lo gic, a nd (his iss ue is gain ing importance in new rechn ologies. We propose an approach for using BI CS to derect transiem

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