1/f NOISES OF HOMOPOLAR AND HETEROPOLAR SEMICONDUCTORS

Abstract

The low-frequency noise spectral density with the 1/f spectrum for homopolar and heteropolar semi-conductors is theoretically obtained taking into account conduction electron-optical phonon interactions. The analytical expressions of the spectral density and Hooge's α H parameter are presented. The analytical temperature dependence of Hooge's parameter is compared with experimental data for n-Si and n-GaAs.