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The influence of long-wave acoustic longitudinal-phonon percolation dynamics on 1/f -type noise level is modeled for homogeneous, non-degenerated and bounded semiconductors. Phonons percolation from semiconductor media to environment regions via socalled «refraction points» of phonons' wave vector phase space is modeled within framework of the bulk mechanism of electron lattice mobility fluctuation. On the base of this mechanism it is shown, that semiconductor surface is the source of suppression of 1/f-noise. It is indicated that in some certain applications of the Fluctuation Theory it is physically correct to use Schönfeld model to consider 1/f noises in semiconductors.

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