1/f Temperature Fluctuations in Solids

Higuchi, Hisayuki; Nakamura, Shuichi; Ochi, S.

doi:10.1063/1.2036702

Cited by 1 publication

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“…Length ( same emitter area of 10 À4 cm 2 is also shown. 19) The measured noises lie between the maximum value and minimum value evaluated. Therefore, it can be concluded that Eq.…”

Section: Methodsmentioning

confidence: 97%

“…where I BR is the base current generated in the depletion layers in base emitter junctions, A E is the area of the emitter, f is the measurement frequency, and K is a constant between 1 Â 10 À13 to 1 Â 10 À14 cm 2 . 19,20) The base recombination current density J BR is given by…”

Section: Expression Of 1=f Noise In Bipolar Transistors 331 Silicon B...mentioning

confidence: 99%

“…This value is very close to the actually measured value of 2 Â 10 À25 A 2 /Hz at f ¼ 10 Hz. 19) The maximum and minimum values of N t will be examined in the discussion section.…”

Section: Expression Of 1=f Noise In Bipolar Transistors 331 Silicon B...mentioning

confidence: 99%

“…Noise current power spectrum S IBR vs base recombination current I BR . Black dots show the measured noises of the silicon bipolar junction transistors 19). Thick lines show the maximum and the minimum noise currents evaluated.…”

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confidence: 99%

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1/f Temperature Fluctuation Mechanism and Some Applications to Electronic Devices

Higuchi

Homma

Nakamura

2013

Jpn. J. Appl. Phys.

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A 1/f fluctuation mechanism based on a theorem that the mean square fractional fluctuation ΔN 2/N 2 in a population N of an ideal gas in diffusion that comes in contact with a heat reservoir equals 1/N was proposed and simulated on a computer. We observed the 1/f power spectra in fluctuation waveforms. To confirm the simulated results, the origin of 1/f fluctuations was proven analytically and also the 1/f fluctuation spectrum of particles in the Brownian motion was verified experimentally. On the basis of the results, the 1/f fluctuations of temperature, resistance, and carrier recombination were formulated and compared with those of the experimental data. It was confirmed that the 1/f fluctuation mechanism could explain the experimental data quite well. The results also verified that the fluctuation due to the mobility fluctuation and the fluctuation due to the carrier density fluctuation were both explained well by the proposed fluctuation mechanism.

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“…Length ( same emitter area of 10 À4 cm 2 is also shown. 19) The measured noises lie between the maximum value and minimum value evaluated. Therefore, it can be concluded that Eq.…”

Section: Methodsmentioning

confidence: 97%

Section: Expression Of 1=f Noise In Bipolar Transistors 331 Silicon B...mentioning

confidence: 99%

“…This value is very close to the actually measured value of 2 Â 10 À25 A 2 /Hz at f ¼ 10 Hz. 19) The maximum and minimum values of N t will be examined in the discussion section.…”

Section: Expression Of 1=f Noise In Bipolar Transistors 331 Silicon B...mentioning

confidence: 99%

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confidence: 99%

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