1995
DOI: 10.1063/1.1145454
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1 kA low-energy electron-beam source

Abstract: A high-current electron beam up to 1 kA has been obtained at an acceleration voltage of 200 V for 1 ms in quasi-steady operation. Maximum power (250 kW) of the electron beam was achieved. The beam current can be controlled independently of the acceleration voltage by changing the discharge current of the plasma cathode. This electron-beam source is useful to pump a high current ion source for neutral beam injection in fusion research.

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Cited by 12 publications
(5 citation statements)
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“…There are commercial products available that can be adjusted for various needs, for example, Spectra-Mat Inc, CA [11] manufactures electron and ion injectors based on hollow cathode plasma sources with a total electron emission current of ∼ 10 A. A 1 kA low energy electron-beam source based on a plasma emitter is described in [12]. For our specific requirements, among which are high perunit emission current (∼ 1 kA), small source size, and compatibility with fusion research grade plasmas, we had to design a novel plasma electron injector.…”
Section: The Plasma Sourcementioning
confidence: 99%
See 1 more Smart Citation
“…There are commercial products available that can be adjusted for various needs, for example, Spectra-Mat Inc, CA [11] manufactures electron and ion injectors based on hollow cathode plasma sources with a total electron emission current of ∼ 10 A. A 1 kA low energy electron-beam source based on a plasma emitter is described in [12]. For our specific requirements, among which are high perunit emission current (∼ 1 kA), small source size, and compatibility with fusion research grade plasmas, we had to design a novel plasma electron injector.…”
Section: The Plasma Sourcementioning
confidence: 99%
“…(The mean collision free path for a 200 eV electron in a 10 13 cm −3 background density is of the order of 10 3 cm). A similar terminology and approach is practised by authors of [12].…”
Section: The Plasma Sourcementioning
confidence: 99%
“…In the present study, a new NB source equipped with an electron-beam-excited plasma (EBEP) [19][20][21][22] has been developed. The EBEP source is able to produce a highdensity plasma at a pressure lower than 0.1 Pa. Sputtering etching of a Si wafer by an Ar NB has also been investigated.…”
Section: Introductionmentioning
confidence: 99%
“…High current low-energy electron beam sources based on plasma cathode emitters have been studied [12,13]. More recently, a microwave plasma cathode gun has also been developed, which produces a focused electron beam extracted from a medium-pressure discharge sustained by microwaves [14].…”
Section: Introductionmentioning
confidence: 99%