Abstract:Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect… Show more
“…With a bandgap of 4.5–4.9 eV and estimated critical breakdown field of 8MV/cm, Ga 2 O 3 possesses a Baliga figure of merit 10 times greater than SiC and four times greater than GaN 2 . Indeed, even at this early stage of development, electric fields of at least 3.8 MV/cm 4 and 5.1 MV/cm 7 have been demonstrated in lateral Ga 2 O 3 FETs and vertical Schottky diodes, respectively, already surpassing bulk critical fields of GaN and SiC. In addition to these promising material properties, melt-growth methods for bulk Ga 2 O 3 substrate growth 8–17 are expected to be more cost-effective than the sublimation techniques used for the growth of SiC substrates, lowering manufacturing costs for Ga 2 O 3 based power electronics.…”
Section: Introductionmentioning
confidence: 94%
“…1. Therefore, understanding and mitigating unintentional doping in Ga 2 O 3 is key to increasing the maximum achievable breakdown voltages in Ga 2 O 3 beyond the recently demonstrated 1 kV devices 7 .Figure 1Normalized breakdown voltage (left axis) vs. doping concentration for single-sided junction power devices. The ideal relationship assuming the full-depletion approximation and 1D electrostatics is shown by the black line.…”
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 1016 cm−3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage.
“…With a bandgap of 4.5–4.9 eV and estimated critical breakdown field of 8MV/cm, Ga 2 O 3 possesses a Baliga figure of merit 10 times greater than SiC and four times greater than GaN 2 . Indeed, even at this early stage of development, electric fields of at least 3.8 MV/cm 4 and 5.1 MV/cm 7 have been demonstrated in lateral Ga 2 O 3 FETs and vertical Schottky diodes, respectively, already surpassing bulk critical fields of GaN and SiC. In addition to these promising material properties, melt-growth methods for bulk Ga 2 O 3 substrate growth 8–17 are expected to be more cost-effective than the sublimation techniques used for the growth of SiC substrates, lowering manufacturing costs for Ga 2 O 3 based power electronics.…”
Section: Introductionmentioning
confidence: 94%
“…1. Therefore, understanding and mitigating unintentional doping in Ga 2 O 3 is key to increasing the maximum achievable breakdown voltages in Ga 2 O 3 beyond the recently demonstrated 1 kV devices 7 .Figure 1Normalized breakdown voltage (left axis) vs. doping concentration for single-sided junction power devices. The ideal relationship assuming the full-depletion approximation and 1D electrostatics is shown by the black line.…”
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 1016 cm−3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage.
“…Therefore, some edge termination protection methods are needed such as field plate to enhance the breakdown voltage [19, 23, 68]. The interface states referred as interface charges normally impact the electric field close to the semiconductor surface and cause the premature breakdown.…”
Section: The Basic Concept Of Schottky Barrier Diodementioning
confidence: 99%
“…Ga 2 O 3 SBD starts to present its potential in power electronics applications.Fig. 4The development of Ga 2 O 3 SBD in recent years [16, 18, 62, 68–71]…”
Section: Schottky Barrier Diode Based On β-Ga2o3mentioning
confidence: 99%
“…9) [68]. Field plate (FP) engineering, a kind of edge termination technology, was first used into Ga 2 O 3 SBD.…”
Section: Schottky Barrier Diode Based On β-Ga2o3mentioning
Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, for example, a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as an alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms are a very attractive option for the next‐generation high‐speed integrated circuits but face serious challenges because of the lack of a high‐quality and natural insulator.
III‐Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN‐based high‐power HFETs on SiC substrate with 60‐nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1–1.2 Ω mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in class AB mode on GaN semiinsulating substrates, a continuous‐wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power‐added efficiency of 40% at 10 GHz. III‐Nitride devices for power‐switching application have achieved near‐theoretical limit for vertical devices‐based GaN native substrates and breakdown voltage as high as 1200 V and on‐resistance as low as 9 mΩ‐cm
2
for lateral HFET devices on low‐cost silicon substrates. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In
0.17
Al
0.83
N barrier HFETs. The very low on‐resistance allows high drain current, but it is subject to the junction temperature the devices can tolerate and is also restricted by the thermal expansion mismatch of the GaN‐on‐Si structures. Normally‐on and Normally‐off GaN HFETs with breakdown voltages in the range of 20–900 V are already commercially available. However, their competitivity against Si‐based IGBT and super junction MOSFETs and SiC‐FETs would depend on several factors such as voltage derating (used voltage versus the breakdown voltage), long‐term reliability, and cost.
The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in an Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary
p
‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz. MODFETs based on Ga
2
O
3
, especially β‐Ga
2
O
3
, have attracted a good deal of interests by the potential high breakdown voltage of Ga
2
O
3
but suffer from limitations imposed by both low electron mobility (affects efficiency and loss) and low thermal conductivity, hindering heat dissipation.
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