1 s–2 p±transitions between hydrogenic states in GaAs low-dimensional systems under external fields

Niculescu, E.C.

doi:10.1006/spmi.2001.0985

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…x \left.\right) - E_{1 p}^{\text{sub}} \left.\right) / �?^{2}}$$where

E_{1 s}^{\text{sub}}

and

E_{1 p}^{\text{sub}}

are the 1 s ‐ground state and 1 p ‐excites state subband energies, and these energies are found from the ground and excited state transcendental equations, respectively. [ 41,47 ] Energies are given as follows for 1 s and 1 p impurity states [ 13 ]

E_{1 s}^{\text{imp}} = \left(\text{min}\right)_{\left(\lambda\right)_{1 s} \textrm{ }} \psi_{1 s}^{\text{imp}} \text{|} H^{A = 1 , B = 0} \text{|} \psi_{1 s}^{\text{imp}} / \psi_{1 s}^{\text{imp}} \text{|} \psi_{1 s}^{\text{imp}}

and

E_{1 p}^{\text{imp}} = \left(\text{min}\right)_{\left(\lambda\right)_{1 p} \textrm{ }} \psi_{1 p}^{\text{imp}} \text{|} H^{A = 1 , B = 1} \text{|} \psi_{1 p}^{\text{imp}} / \psi_{1 p}^{\text{imp}} \text{|} \psi_{1 p}^{\text{imp}}

The intradonor transition energy between ground state 1 s and excited state 1 p is defined as [ 43,47 ]

…”

Section: Theorymentioning

confidence: 99%

“…[39,40] In the literature, there are many studies on binding energy and transition energy calculations for different structures. [12,[41][42][43] One of the most important reasons for calculating the binding energy and transition energy is that it is of great importance in determining the optical properties of the system. Çakır et al [44] have calculated the variation of the difference between the energy levels of the QD1 with impurity as a function of dot radius.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Calculation of Intradonor Normalized Transition Energy in Spherical Quantum Dots Made of Different Materials

Mese

Cicek

Özkapı

et al. 2023

Physica Status Solidi (b)

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Under the effective mass approximation, the binding energies, transition energies between 1s and 1p states, and normalized transition energies of spherical quantum dots made of different materials are calculated using the variational method. In particular, binding, transition, and normalized transition energies are examined depending on the radius of the quantum dot and the position of the hydrogenic impurity. It is observed that the binding energy and transition energy decrease as the radius of the quantum dot increases, whereas the normalized transition energy increases. In all four different structures, it is seen that the binding energy first reaches a maximum and then starts to decrease according to the position of the hydrogenic impurity. In contrast, the transition energy behaves almost the opposite. Additionally, when the change of the normalized transition energy is examined according to the impurity position, it is determined that it decreases up to the value of ri/R = 0.6 and then remains almost constant. According to our literature review, the normalized transition energy for the four different quantum dots is calculated for the first time in this study.

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“…x \left.\right) - E_{1 p}^{\text{sub}} \left.\right) / �?^{2}}$$where