1 W CW reliable λ = 730 nm aluminium-freeactive layer diode laser

Rusli, S.; Al-Muhanna, A.; Earles, T.; Mawst, Luke J.

doi:10.1049/el:20000317

Cited by 8 publications

(1 citation statement)

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“…GaInP lattice matched to GaAs has been proposed as an alternative to GaAlAs for both electronic [5][6][7] and optical devices. [8][9][10][11] The GaInP / GaAs material system has a larger valence band discontinuity 6 and a lower surface recombination velocity 12 than AlGaAs/ GaAs. This results in higher emitter injection efficiency and higher device gain in the case of heterojunction bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications

Combrié¹,

Bansropun²,

Lecomte³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this article, we investigate the dry etching of GaInP / GaAs based material system using an inductively coupled plasma ͑ICP͒ etching system. In a view to develop a suitable ICP process for the etching of aluminum-free material, ridge waveguides have been fabricated and the effects of the ICP parameters have been assessed. The coil power and the platen power have been varied at constant pressure and temperature for a chlorine-based process. The surface quality, sidewall profile, and selectivity have been reported. We also demonstrate the optimization of the chlorine-based process for deep etching and its subsequent implementation in photonic band gap device fabrication for 1.55 m optical applications. The optimized process has been shown to provide a high aspect ratio and a good selectivity for 250 nm diam holes with a depth of 3 m in the GaInP / GaAs material system. The influence of the ICP parameters on this material system have been analyzed mainly by scanning electron microscopy with particular attention drawn to the ways of reducing trenching, an effect commonly associated with ICP etching.

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