Optimization of an inductively coupled plasma etching process of GaInP∕GaAs based material for photonic band gap applications

Abstract

In this article, we investigate the dry etching of GaInP / GaAs based material system using an inductively coupled plasma ͑ICP͒ etching system. In a view to develop a suitable ICP process for the etching of aluminum-free material, ridge waveguides have been fabricated and the effects of the ICP parameters have been assessed. The coil power and the platen power have been varied at constant pressure and temperature for a chlorine-based process. The surface quality, sidewall profile, and selectivity have been reported. We also demonstrate the optimization of the chlorine-based process for deep etching and its subsequent implementation in photonic band gap device fabrication for 1.55 m optical applications. The optimized process has been shown to provide a high aspect ratio and a good selectivity for 250 nm diam holes with a depth of 3 m in the GaInP / GaAs material system. The influence of the ICP parameters on this material system have been analyzed mainly by scanning electron microscopy with particular attention drawn to the ways of reducing trenching, an effect commonly associated with ICP etching.

Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity

“…1͑a͒, resulting in an effective photonic potential well. Thanks to an original fabrication technology, 9 based on the use of a GaInP sacrificial layer and a high density plasma etching process, 10 we show that for this cavity design, the Q factor in GaAs membranes can be greatly improved. Thanks to an original fabrication technology, 9 based on the use of a GaInP sacrificial layer and a high density plasma etching process, 10 we show that for this cavity design, the Q factor in GaAs membranes can be greatly improved.…”

Photonic crystal microcavity coupled to a waveguide: An integrated system full of physics

“…An InGaP alloy was used as sacrificial layer. Fabrication steps entailed electron-beam lithography, high-density plasma etching (ICP), HCl based wet etching [7].…”

Numerical simulation of photonic crystal based nano-resonators on scanning probe tip for enhanced light confinement

“…13 However in the visible optical wavelength range, Si has strong medium propagation loss that makes it not suitable for optical PhC devices. 14 Even the visible transparent materials with large refraction index contrast, such as GaN, AlN, and GaInP, have been used for optical PhC designs, 15,16 most of them suffer from complicated and technologically challenging fabrication process. 17 Recently, Si 3 N 4 has been introduced as an alternative cost-effective optical PhC material due to its metal-oxide compatibility with Si fabrication technology and lossless optical property, which make it a promising candidate for optical PhC design.…”