1-W SiGe power HBTs for mobile communication

Impact of base doping profile on stability characteristics of SiGe HBTs

“…Besides the advantages in low-power, high-speed implementations with high integration capabilities, SiGe HBTs have begun to challenge III-V devices in RF/microwave power amplifications [2,3]. Large-area discrete SiGe HBTs constantly suffer from instability-induced oscillations as frequently observed from on-wafer device characterizations.…”

On The Operation Configuration of SiGe HBTs Based on Power Gain Analysis

“…For high power amplification, these devices are customized to offer high breakdown voltage characteristics by lowering their collector doping concentrations [16]. Despite the prevalence of this typical doping profile and Ge profile, a number of SiGe power HBTs [1], [2], [9]- [11], [13] employing a heavily doped base region (higher than the emitter region, typical of III-V HBTs) have been demonstrated, by taking the advantage of having a large valence band offset in presence of a box-type Ge profile. No matter which type of Ge profile and doping profile are employed for SiGe HBTs, power gain values are of the most important concern for designers when employing these devices for power amplification.…”

“…A higher power gain can reduce the required input RF power level, reduce the number of power amplification stages of a power amplifier module, improve power added efficiency (PAE ) and, thus, reduce the amount of heat generation within the power devices. In order to obtain the maximum power gain values, both common-emitter (CE) [2], [4], [8], [12], [16] and common-base (CB) [1], [9]- [11], [13] configurations have been attempted for power amplification using SiGe HBTs. However, to date, a recognized fundamental explanation on which configurations ought to be judiciously employed for power amplification has not been available.…”

Recent advances in microwave active filter design. Part 2: Tunable structures and frequency control techniques

“…• Low-Noise Amplifiers (LNA) for receiver in cordless phones and mobiles 19 20 . • Power Amplifiers (PA) for transmitters in cordless and mobile phones [21].…”