Impact of base doping profile on stability characteristics of SiGe HBTs

Jiang, Ningyue; Ma, Zhenqiang

doi:10.1109/icsict.2006.306132

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Modeling and Discussion Of Stability Factor K1

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2010

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“…This conclusion does not agree with the analysis in Ref. [6] that for the RFCMOS the source resistance is always helpful to increase the K and improve the device stability. And the stability effect of the transconductance g m is similar to the emitter resistance.…”

Section: Modeling and Discussion Of Stability Factor Kcontrasting

confidence: 90%

Intrinsic stability of an HBT based on a small signal equivalent circuit model

et al. 2010

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Intrinsic stability of the heterojunction bipolar transistor (HBT) was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

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Section: Modeling and Discussion Of Stability Factor Kcontrasting

confidence: 90%