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We report a tunable, single-pass, pulsed nanosecond difference-frequency-generation (DFG) source based on the new semiconductor nonlinear material, orientationpatterned gallium phosphide (OP-GaP). The DFG source is realized by mixing the output signal of a nanosecond OPO tunable over 1723-1827 nm with the input pump pulses of the same OPO at 1064 nm in an OP-GaP crystal, resulting in tunable generation over 233 nm in the midinfrared from 2548 to 2781 nm. Using a 40-mm-long crystal, we have produced ~14 mW of average DFG output power at 2719 nm for a pump power of 5 W and signal power of 1 W at 80 kHz repetition rate. To the best of our knowledge, this is the first single-pass nanosecond DFG source based on OP-GaP. The DFG output beam has a TEM00 spatial mode profile and exhibits passive power stability better than 1.7% rms over 1.4 hours at 2774 nm, compared to 1.6% and 0.1% rms for the signal and pump, respectively. The OP-GaP crystal is recorded to have a temperature acceptance bandwidth of 17.7 ºC. Mid-infrared (Mid-IR) pulsed sources in the 2-3 µm wavelength range are highly desirable for industrial, medical and securityrelated applications [1]. Access to this spectral region can be achieved by using conventional bulk/fiber lasers as well as optically pumped semiconductor lasers [2][3][4]. However, stable, high output power together with spectral agility can be best achieved by nonlinear frequency conversion techniques, such as difference-frequency-generation (DFG) and optical parametric oscillators (OPOs). While OPOs can provide tunability together with high efficiency, DFG sources can be realized in simple singlepass architecture. The ability to tune one of the input beams in the DFG process results in tunable output at longer wavelengths. Such DFG sources based on near-IR nonlinear materials such as -BaB2O4 (BBO) [5], KTiOPO4 (KTP) [6] and MgO-doped periodically poled LiNbO3 (MgO:PPLN) [7], and mid-IR nonlinear materials such as ZnGeP2 (ZGP) [8] and orientation-patterned GaAs (OPGaAs) [9] have been previously demonstrated. Although ZGP and OP-GaAs can provide spectral coverage deep into the mid-IR, they require pumping beyond 2 μm due to two-photon absorption at short-wavelength transparency cut-off [10]. On the other hand, BBO, PPKTP and MgO:PPLN can be pumped using the readily available near-IR laser sources in the 1-2 μm range, but their longwavelength transparency cut-off limits efficient DFG beyond ~4 μm. As such, it is important to investigate alternative nonlinear materials, which can be pumped in the near-IR to generate deep mid-IR radiation. One such material is the recently developed birefringent nonlinear crystal, CdSiP2 (CSP), which enables DFG at wavelengths as long as 6 µm when pumped in the near-IR [11]. Orientation-patterned gallium phosphide (OP-GaP) is a new quasiphase-matched (QPM) nonlinear material with transparency across 0.8-12 µm and a high nonlinear coefficient of ~70 pm/V [12]. It also possesses a high thermal conductivity of 110 W/m-K, leading to a high damage threshold of 0.8 ...
We report a tunable, single-pass, pulsed nanosecond difference-frequency-generation (DFG) source based on the new semiconductor nonlinear material, orientationpatterned gallium phosphide (OP-GaP). The DFG source is realized by mixing the output signal of a nanosecond OPO tunable over 1723-1827 nm with the input pump pulses of the same OPO at 1064 nm in an OP-GaP crystal, resulting in tunable generation over 233 nm in the midinfrared from 2548 to 2781 nm. Using a 40-mm-long crystal, we have produced ~14 mW of average DFG output power at 2719 nm for a pump power of 5 W and signal power of 1 W at 80 kHz repetition rate. To the best of our knowledge, this is the first single-pass nanosecond DFG source based on OP-GaP. The DFG output beam has a TEM00 spatial mode profile and exhibits passive power stability better than 1.7% rms over 1.4 hours at 2774 nm, compared to 1.6% and 0.1% rms for the signal and pump, respectively. The OP-GaP crystal is recorded to have a temperature acceptance bandwidth of 17.7 ºC. Mid-infrared (Mid-IR) pulsed sources in the 2-3 µm wavelength range are highly desirable for industrial, medical and securityrelated applications [1]. Access to this spectral region can be achieved by using conventional bulk/fiber lasers as well as optically pumped semiconductor lasers [2][3][4]. However, stable, high output power together with spectral agility can be best achieved by nonlinear frequency conversion techniques, such as difference-frequency-generation (DFG) and optical parametric oscillators (OPOs). While OPOs can provide tunability together with high efficiency, DFG sources can be realized in simple singlepass architecture. The ability to tune one of the input beams in the DFG process results in tunable output at longer wavelengths. Such DFG sources based on near-IR nonlinear materials such as -BaB2O4 (BBO) [5], KTiOPO4 (KTP) [6] and MgO-doped periodically poled LiNbO3 (MgO:PPLN) [7], and mid-IR nonlinear materials such as ZnGeP2 (ZGP) [8] and orientation-patterned GaAs (OPGaAs) [9] have been previously demonstrated. Although ZGP and OP-GaAs can provide spectral coverage deep into the mid-IR, they require pumping beyond 2 μm due to two-photon absorption at short-wavelength transparency cut-off [10]. On the other hand, BBO, PPKTP and MgO:PPLN can be pumped using the readily available near-IR laser sources in the 1-2 μm range, but their longwavelength transparency cut-off limits efficient DFG beyond ~4 μm. As such, it is important to investigate alternative nonlinear materials, which can be pumped in the near-IR to generate deep mid-IR radiation. One such material is the recently developed birefringent nonlinear crystal, CdSiP2 (CSP), which enables DFG at wavelengths as long as 6 µm when pumped in the near-IR [11]. Orientation-patterned gallium phosphide (OP-GaP) is a new quasiphase-matched (QPM) nonlinear material with transparency across 0.8-12 µm and a high nonlinear coefficient of ~70 pm/V [12]. It also possesses a high thermal conductivity of 110 W/m-K, leading to a high damage threshold of 0.8 ...
Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. -First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [110]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h À1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.
The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssr.202200198.
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