Second‐Harmonic Generation in Heteroepitaxially Grown, Orientation‐Patterned, Ternary GaAsP Periodic Structures

Wang, Li; Vangala, Shivashankar; Popien, Stefan; Beutler, Marcus; Tassev, V.; Petrov, Valentín

doi:10.1002/pssr.202200198

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Cited by 3 publications

References 15 publications

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Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy

Petrov,

Wang,

Exner

et al. 2024

Optical Materials: X

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Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy

Petrov,

Wang,

Exner

et al. 2024

Optical Materials: X

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Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands

Zollner,

Vangala,

Tassev

et al. 2023

Applied Physics Letters

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The infrared dielectric function of thick GaAs1−xPx alloy layers grown on (001) GaAs substrates by hydride vapor phase epitaxy was investigated in the reststrahlen region using Fourier-transform infrared ellipsometry. The spectra are influenced by the Berreman artifact at the longitudinal optical phonon frequency of the GaAs substrate and by interference fringes due to the finite layer thickness. The ellipsometric angles were analyzed to determine the dielectric function of the alloy layer. Two-mode behavior, including strong GaAs-like and GaP-like optical phonons, was observed, confirming the results of Verleur and Barker [Phys. Rev. 149, 715 (1966)]. Due to the increased sensitivity of ellipsometry in the reststrahlen region, several weak phonon features could also be seen. The lattice absorption peaks are asymmetric and show side bands at the lower and higher frequencies. A single additional peak, as suggested by the percolation model, does not describe the spectra. The cluster model proposed by Verleur and Barker is a better fit to the data. Due to the broadening of the phonon absorption peaks, the authors were unable to find a unique decomposition into multiple components.

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Frequency Conversion in OP-GaAsP for MLWIR Operation

Tassev,

Vangala,

Linser

et al. 2024

Frontiers in Optics + Laser Science 2024 (FiO, LS)

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Second‐Harmonic Generation in Heteroepitaxially Grown, Orientation‐Patterned, Ternary GaAsP Periodic Structures

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/pssr.202200198.

Cited by 3 publications

References 15 publications

Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy

Transmission and nanohardness studies of ternary GaAs1-xPx layers grown from the vapor phase by heteroepitaxy

Infrared dielectric function of GaAs1−xPx semiconductor alloys near the reststrahlen bands

Frequency Conversion in OP-GaAsP for MLWIR Operation

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