2019 IEEE International Solid- State Circuits Conference - (ISSCC) 2019
DOI: 10.1109/isscc.2019.8662457
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10.3 A 0.12mm2 Wien-Bridge Temperature Sensor with 0.1°C (3σ) Inaccuracy from -40°C to 180°C

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Cited by 27 publications
(31 citation statements)
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“…As shown in Fig. 1, it consists of a frequency-locked loop (FLL), which locks the frequency fDCO of a digitally-controlled oscillator (DCO) to the phase-shift of a Wien bridge (WB) RC filter [6]. The temperature dependence of the WB is compensated by information provided by a Wheatstone bridge (WhB) temperature sensor [7].…”
Section: Inaccuracy From -45°c To 85°c After Digital Temperature Compensation çAğrı Gürleyük Sining Pan Kofi Aa Makinwamentioning
confidence: 99%
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“…As shown in Fig. 1, it consists of a frequency-locked loop (FLL), which locks the frequency fDCO of a digitally-controlled oscillator (DCO) to the phase-shift of a Wien bridge (WB) RC filter [6]. The temperature dependence of the WB is compensated by information provided by a Wheatstone bridge (WhB) temperature sensor [7].…”
Section: Inaccuracy From -45°c To 85°c After Digital Temperature Compensation çAğrı Gürleyük Sining Pan Kofi Aa Makinwamentioning
confidence: 99%
“…This choice ensures that the accuracy of the frequency reference only depends on the spread of two types of resistors. The phase-shift of the WB (ΦWB) is digitized by a 2 nd -order Phase Domain ΔΣ-Modulator (PDΔΣM) [6]. As shown in Fig.…”
Section: Inaccuracy From -45°c To 85°c After Digital Temperature Compensation çAğrı Gürleyük Sining Pan Kofi Aa Makinwamentioning
confidence: 99%
“…Thermal diffusivity (TD) sensors [8], and resistor-based sensors [9] have also demonstrated good accuracy at high temperatures. Compared to BJT-based sensors, however, the milliwatt-level power dissipation of TD sensors, and the 2point calibration required by precision resistor-based TDCs makes them less suitable for automotive applications.…”
Section: Introductionmentioning
confidence: 99%
“…This is particularly true to modern ICs in advanced technologies, such as FD-SOI and FinFET, where the aggressively scaled feature sizes and higher integration density, in combination of rapidly increased chip complexity, clock frequency and data rate and power density, as well as deterioration in thermal conduction due to insulating dielectrics, together nonlinearly accelerates the self-heating induced thermal problems at chip level. Over years, significant efforts have been devoted to develop various on-chip thermal sensing and management techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Many thermal sensors have been reported including thermistor, thermocouple, BJT and diode, as well as CMOS circuit blocks [4][5][6][7][8][9][10][11][12][13][14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…Over years, significant efforts have been devoted to develop various on-chip thermal sensing and management techniques [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Many thermal sensors have been reported including thermistor, thermocouple, BJT and diode, as well as CMOS circuit blocks [4][5][6][7][8][9][10][11][12][13][14][15][16]. While various new sensors were reported to improve thermal sensitivity itself, one critical challenge remains, which is how to realize fine spatial temperature sensing resolution down to single transistor level on a large and complex IC chip that is essential to pin-pointing the self-heating sources (hot spots), in-operando, within a transistor, and hence being able to practically achieve run-time full-chip smart thermal management in real-world applications.…”
Section: Introductionmentioning
confidence: 99%