10 Gbit/s PON demonstration using a REAM-SOA in a bidirectional fiber configuration up to 25 km SMF

Girault, Gwenaëlle; Bramerie, Laurent; Vaudel, Olivier; Lobo, Sébastien; Besnard, Pascal; Joindot, Michel; Simon, Jean‐Claude; Kazmierski, C.; Dupuis, N.; Garreau, Alexandre; Belfqih, Z.; Chanclou, Philippe

doi:10.1109/ecoc.2008.4729531

Cited by 10 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Bidirectional (CW downstream and 10 Gb/s upstream) transmission experiments with 10 km and 25 km SMF showed 0.4 dB and 1.5 dB penalties, respectively, confirming the low-chirp capability of the device. In spite of a low penalty at 25 km, a BER floor at 10 −6 has been observed and identified as a result of the well-known Rayleigh backscattering problem [23]. Reaching longer distances will certainly require improved amplification in the RAM (providing a better ratio between the feeding and out-coming powers) and/or forward error correction (FEC) electronics.…”

Section: Remote Amplified Modulatorsmentioning

confidence: 99%

Electro-Absorption-Based Fast Photonic Integrated Circuit Sources for Next Network Capacity Scaling [Invited]

Kazmierski

2012

J. Opt. Commun. Netw.

View full text Add to dashboard Cite

Increasing component speed, throughput and efficiency inevitably leads to optoelectronic transmitters and receivers of more complexity, larger footprint, consumption and cost. Monolithic integration is known to help in solving these problems typical of discrete components. However, lowering of the cost, consumption and material usage must preserve high modulation performance especially while increasing the data rate. These issues are addressed by our new photonic integrated circuit technology on indium phosphide. The demonstrated laser transmitter circuits rely on electro-absorption modulators, one of the smallest and most energy-efficient electro-optic converters. By improving old and creating new component classes, this approach is expected to reduce dramatically their environmental footprint.

show abstract

Section: Remote Amplified Modulatorsmentioning

confidence: 99%

Electro-Absorption-Based Fast Photonic Integrated Circuit Sources for Next Network Capacity Scaling [Invited]

Kazmierski

2012

J. Opt. Commun. Netw.

View full text Add to dashboard Cite

show abstract

“…Thus this paper seeks to realize high-speed transmission using small-bandwidth transceivers assisted by pre-and post-processing of the data. Noticing the shortcomings of FP-LD or RSOA, the integrated semiconductor optical amplifier (SOA) and reflective electro-absorption modulator (REAM) were proposed recently to enhance the uplink capacity of WDM-PONs up to and beyond 10 Gb/s [7][8][9][10]. Thanks to the employment of the external modulator, the SOA-REAM has a much lower chirp parameter and an electrical bandwidth of 20 GHz.…”

Section: Introductionmentioning

confidence: 99%

40 Gb/s Operation of SOA-REAM in Single-Feeder WDM-PON [Invited]

Guo

Tran

2012

J. Opt. Commun. Netw.

View full text Add to dashboard Cite

The integrated semiconductor optical amplifier (SOA) with a reflective electro-absorption modulator (REAM) is a promising candidate for the colorless optical network unit in a wavelength-division-multiplexed passive optical network (WDM-PON), due to its low chirp and wide bandwidth. However, 40 Gb/s operation of REAMs (bandwidth ≤ 20 GHz) still encounters severe intersymbol interference. Furthermore, Rayleigh backscattering (RB) and discrete reflections cause strong beat noise in WDM-PONs with single-fiber loopback configuration. In this paper, we present two novel techniques based on electrical equalization for a 40-Gb/s single-feeder WDM-PON based on SOA-REAM. The first method is to employ partial-response (PR) signaling and a noise predictive maximum likelihood (NPML) equalizer at the upstream receiver. The other one combines correlative level (CL) pre-coding with partial-response maximum likelihood (PRML) equalization. We experimentally demonstrate a 40-Gb/s uplink of 20 km using a 20-GHz SOA-REAM in a WDM-PON by both PR-NPMLand CL-PRML. The results also verify the superiority of PR-NPML over the previously reported equalizers. Moreover, compared with PR-NPML, CL-PRML further improves the system performance. Experiments prove that the tolerance to beat noise and the receiver sensitivity are enhanced by 4 dB and 0.8 dB, respectively, at a bit error ratio of 2 × 10 −4 .Index Terms-Electro-absorption modulator (EAM); Maximum likelihood (ML); Partial response (PR); Passive optical network (PON).

show abstract

“…In the upstream direction, the bidirectional amplifier is used since the REAM provided no gain but 8-dB insertion loss. However, the external amplifier could be removed if an REAM-SOA (semiconductor optical amplifier) reported in [6] is used instead of REAM. To achieve error-free transmission, a pre-amplifier has to be used in front of upstream receivers in OLT since without it the minimum achievable error rate is 10 -7 .…”

Section: Otht1pdfmentioning

confidence: 99%

A 10 Gb/s Passive-Components-based WDM-TDM Reconfigurable Optical Access Network Architecture

Tran

Jung

Okonkwo

et al. 2011

Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2011

View full text Add to dashboard Cite

show abstract

10 Gbit/s PON demonstration using a REAM-SOA in a bidirectional fiber configuration up to 25 km SMF

Cited by 10 publications

References 0 publications

Electro-Absorption-Based Fast Photonic Integrated Circuit Sources for Next Network Capacity Scaling [Invited]

Electro-Absorption-Based Fast Photonic Integrated Circuit Sources for Next Network Capacity Scaling [Invited]

40 Gb/s Operation of SOA-REAM in Single-Feeder WDM-PON [Invited]

A 10 Gb/s Passive-Components-based WDM-TDM Reconfigurable Optical Access Network Architecture

Contact Info

Product

Resources

About