10-Gbps 20-km Feedback-Resistant Transmission Using Directly Modulated Quantum-Dot Lasers

He, Yiming; Zhang, Zhiqing Philippe; Lv, Zhongliang; Yang, Tao; Lu, Dan; Zhao, Lingjuan

doi:10.1109/lpt.2020.3025209

Cited by 10 publications

(6 citation statements)

References 14 publications

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“…Under continuous-wave electrical injection, these lasers achieved an output power exceeding 9 mW, with a linewidth of 716 kHz, a 3-dB bandwidth of 4 GHz, and non-return-to-zero signal modulation at 8 Gbit/s [6]. Furthermore, He et al evaluated the feedback-resistant performance of a 10-Gbps directly modulated 1.3 µm InAs/GaAs QDots laser [8]. Comparative analysis with a directly modulated InGaAsP/InP quantumwell Fabry-Perot laser, featuring similar structure and parameters, revealed the QDots laser's superior stability against feedback.…”

Section: Introductionmentioning

confidence: 99%

Directly modulated quantum-dash mode-locked lasers for millimeter-wave over fiber applications

Liu,

Lu,

Liu

et al. 2024

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVII

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A directly modulated quantum dash mode-locked laser is proposed for a 50-GHz millimeter-wave over fiber architecture. This advancement offers enhanced fiber-wireless communication capabilities, facilitating coverage of 15-km SMF and 2m wireless QPSK transmissions. By utilizing the directly modulated laser (DML), we have successfully achieved an optical heterodyne mmW frequency of 50 GHz with exceptional stability. Notably, the measured RF beat-note 3-dB linewidth of the QDash DML is significantly reduced to 2.4 kHz, without the need for any optical feedback scheme. This DML-based hybrid architecture demonstrates the potential to seamlessly integrate with existing optical and wireless networks for next-generation indoor and short-reach mobile communications.

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Section: Introductionmentioning

confidence: 99%

Directly modulated quantum-dash mode-locked lasers for millimeter-wave over fiber applications

Liu,

Lu,

Liu

et al. 2024

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVII

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“…Benefiting from the unique three-dimensional carrier confinement and delta-like density of state function of quantum dot (QD) material, [17] QD lasers have demonstrated low threshold current density, [18] high differential gain, [19] high temperature stability, [20,21] and strong tolerance to EOF. [22,23] A smaller linewidth enhancement (𝛼) factor of QD lasers below 1 compared to that of QW structures (between 3 and 5) can reduce laser linewidth by more than one order of magnitude. [24][25][26] QD materials are also known to be insensitive to threading dislocation defects, and this property have been successful applied in silicon photonic laser sources.…”

Section: Introductionmentioning

confidence: 99%

High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

Wang

Yang

et al. 2023

Laser & Photonics Reviews

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Single‐frequency semiconductor lasers represent a critical role in optical communications, light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom‐like quantum dot (QD) materials and advanced lateral gratings, a high‐power, ultra‐low‐noise 1.3 µm InAs/GaAs QD distributed feedback laser is demonstrated. Stable single‐longitudinal‐mode output power of 100 mW from 25 ℃ to 85 ℃ is achieved with a maximum side mode suppression ratio of 62.6 dB, and the variations of threshold current and slope efficiency over the temperature range are slight, indicting a high temperature stability. A record‐narrow intrinsic linewidth of 1.62 kHz is achieved at 55 ℃ with a white noise level of merely 515 Hz2 Hz–1, and a minimum averaged relative intensity noise of only –166 dB/Hz between 0.1 GHz and 20 GHz is obtained at 25 ℃. Furthermore, a strong tolerance to external optical feedback (〉 –14 dB) is demonstrated in the range from 25 ℃ to 85 ℃, with a maximum value of –8 dB at 85 ℃. This high‐quality single‐frequency laser fabricated with simplified processes and compact size paves the way for its future large‐scale applications such as high‐capacity optical communication, high‐precision optical detection, high‐speed optical interconnections, etc.

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“…Indeed, although directly modulated lasers are more energy‐efficient and have higher linearity in short‐range microwave photonic links, the addition of a single tone modulation can make them more sensitive to external feedback [13]. To this end, a directly modulated QD laser on native substrate exhibiting a high degree of resistance to back‐reflection was recently reported by keeping a low bit‐error rate (BER) with a feedback strength at −9 dB [14]. In this study, we go a step further by investigating the feedback sensitivity of a directly modulated QD laser on Si.…”

Section: Introductionmentioning

confidence: 99%

Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Ding

Dong

Huang

et al. 2022

Electronics Letters

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This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator‐free photonic integrated circuits based on quantum dot lasers.

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10-Gbps 20-km Feedback-Resistant Transmission Using Directly Modulated Quantum-Dot Lasers

Cited by 10 publications

References 14 publications

Directly modulated quantum-dash mode-locked lasers for millimeter-wave over fiber applications

Directly modulated quantum-dash mode-locked lasers for millimeter-wave over fiber applications

High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers

Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

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