10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Zhang, Qing Chun Jon; Callanan, Robert; Agarwal, Anant; Burk, Albert A.; O’Loughlin, Michael J.; Palmour, John W.; Scozzie, Charles

doi:10.4028/www.scientific.net/msf.645-648.1025

Cited by 14 publications

(13 citation statements)

References 2 publications

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“…Repetitive switching tests and stress tests may be carried out in the future to investigate the potential bipolar degradation phenomenon. Other papers in literature report outstanding switching performance [9], [20]. Nevertheless, comparing the actual BJTs and Darlingtons with the devices from literature would not be fair as the device in [9] performs only in unipolar mode and the device in [20] is tested only at 2 kV and 30 A/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Asllani

Bevilacqua

Morel

et al. 2020

MSF

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This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

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Section: Resultsmentioning

confidence: 99%

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Asllani

Bevilacqua

Morel

et al. 2020

MSF

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“…Bu cm² at 854 A/cm 2 . The current gain value can be considered to be low as compared to literature [10]- [16]. The reasons for this are both technological.…”

Section: Static Characteristicsmentioning

confidence: 95%

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Asllani

Morel

Bevilacqua

et al. 2020

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported. The 2.4 mm² SiC BJT show good static and switching behavior. The current gain is low compared to literature, but several issues have been identified and can be improved. For the first time, the Short-circuit ruggedness of a 10 kV SiC-BJT is reported. These tests show outstanding performance with at least 16 µs withstand time. Several samples have been brought to failure and revealed an outstanding 52.1 J/cm 2 of short-circuit critical energy at 32% of breakdown voltage. The failure seems to happen on the top face metallization since the devices failed in blocked mode and the base-emitter terminals shorted. The SiC BJT handles without failing at least 3 times the critical Short-circuit energy of the commercial SiC MOSFETs. In addition, switching performance is much better than that of Si-IGBTs.

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“…to overcome the large resistance of high voltage unipolar devices, twelve 10 kV MOSFETs have been connected in parallel with JBS diodes in the same module [11]. For bipolar devices, MESA/JTE protected BJT (Bipolar Junction Transistor) have shown a 10 kV breakdown voltage, but the current gain is limited [12]. Etched JTE has been used to protect nearly 6 kV thyristors to replace the commonly used implanted JTE [13].…”

Section: Requirements For Ultra High Voltage Devicesmentioning

confidence: 99%

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Planson

Brosselard

Isoird

et al. 2014

2014 International Semiconductor Conference (CAS)

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International audienceThe development of high voltage devices is a great challenge. At least, railway and smart grids are examples of applications requiring high voltage devices. SiC power devices and technology seem to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (> 6.5 kV) applications compared to Gallium Nitride. Diamond also is considered as a promising material for the next generation power devices. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC and diamond devices, before combining some of them to reach higher and higher breakdown voltages. Finally, a new setup is under development in order to extract the ionization coefficients, compulsory to predict the breakdown voltage

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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Cited by 14 publications

References 2 publications

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

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