10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

A new generation of high-power semiconductor devices

“…mosta koji sadrži 12 SiC MOSFET i 6 JBS dioda po jednom prekidaču [13] Na osnovu dosadašnjih iskustava u razvoju i primeni elektronskih komponenti na bazi poluprovodničkih materijala velikog energetskog procepa može se zaključiti da će se GaN koristiti za proizvodnju komponenti za rad na visokim frekvencijama a za male snage/napone dok će se SiC koristiti za prekidačke komponente za velike snage/napone.…”

Silicon carbide power device status and issue

“…recovery free SiC Schottky diodes SiC VJFET, significant improvement in overall efficiency, up to 99% overall efficiency, can be achieved [13] Gate drivers that are used to drive silicon IGBTs can be used to drive the SiC JFET; however, n optimized driver specifically designed to drive the normally-off JFET can significantly improve the switching performance of the SiC JFET. One such driver is a two-stage DC-coupled driver [6]. When an optimized driver is used, a reduction of 80% and 70% in turn-off time and switching loss is observed, respectively [11].…”

15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

“…For high power applications, many MOSFET chips can be paralleled to form a MOSFET module. In paper [10], 12 dies of 10 kV/10 A MOSFETs are paralleled to form a single 10 kV 120 A switch.…”

“…Many well-known MV SST designs are depicted in Fig. 1, including designs by Alstom [5], Bombardier [6], UNIFLEX [7], ABB PETT [8], GE Global Research [10], EPRI [9], ETH [11] and the FREEDM System Center [12], [13], [19].…”