100 GHz active electronic probe for on-wafer S-parameter measurements

Majidi-Ahy, R.; Shakouri, M.S.; Bloom, D. M.

doi:10.1049/el:19890558

Cited by 10 publications

(2 citation statements)

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“…At this point, it became apparent that we had managed to develop a technology that had the characterization of mm-wave ICs from 75GHz to 110 GHz band with the low-frequency vector network analyzer ( Figure 12) [46]. A group from University of California, Santa Barbara (United States) applied nonlinear transmission lines for generating broadband stimulus, expanding the bandwidth of the active probe for 8 GHz to 96 GHz [47] and one year later for 7-120 GHz band with an impressive measurement repeatability of 0.2 dB [48].…”

Section: Micromachined On-wafer Probe Technologymentioning

confidence: 99%

RF Probe Technology: History and Selected Topics

Rumiantsev

Doerner

2013

IEEE Microwave

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Section: Micromachined On-wafer Probe Technologymentioning

confidence: 99%

RF Probe Technology: History and Selected Topics

Rumiantsev

Doerner

2013

IEEE Microwave

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“…This is a potentially powerful capability, as it would allow integration of diode-based circuits such as multipliers, detectors, and mixers directly on the probe tip. For example, a 6port reflectometer [55] or even a frequency extender could be integrated onto the probe [56], both alleviating the high loss associated with long waveguide sections.…”

Section: Integration Of Sensors and Devicesmentioning

confidence: 99%

Micromachined On-Water Probes for Characterization of Terahertz Devices and Circuits

Bauwens

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• I would like to first thank my advisor, Bobby Weikle, not only for his support and patience over the years, but also for his outstanding teaching. His microwave engineering class is the origin of my interest in this field, which set me on the path that led to this work. • I would like to thank Scott Barker and Art Lichtenberger for countless helpful discussions throughout the entirety of this work. • I am especially appreciative of the hard work of Chunhu Zhang and Naser Alijabbari in the development and implementation of fabrication processes that made this work possible. • I would like to thank Acar Isin for his company in the FIR lab throughout the many hours of testing, and for his generous time and effort machining the many miscellaneous parts and fixtures needed for experiments throughout this work. • I would like to thank the developers of scikit-rf for providing an incredibly useful tool that has saved innumerable hours of my time. • Finally, I would like to thank my family and friends. The time spent with you outside of the lab has been an invaluable part of this journey.

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5-100 GHz InP coplanar waveguide MMIC distributed amplifier

Majidi-Ahy

Nishimoto

Riaziat

et al. 1990

IEEE Trans. Microwave Theory Techn.

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A single-stage 5-100 GHz InP MMIC amplifier with an average gain of more than 5.5 dB has been developed. This MMIC distributed amplifier has the highest frequency and bandwidth of operation (5-100 GHz) reported to date for wide-band amplifiers. The average associated (not optimized) noise figure of the MMIC amplifier was approximately 5.8 dB measured over 4-40 GHz. The active devices in this seven-section distributed amplifier were 0.1 p m mushroom gate, InGaAs-InAIAs lattice-matched HEMT's on a semi-insulating InP substrate. Coplanar waveguide was the transmission medium for this 100 GHz MMIC with an overall chip dimension of 500 pm by 860 pm.

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100 GHz active electronic probe for on-wafer S-parameter measurements

Cited by 10 publications

References 1 publication

RF Probe Technology: History and Selected Topics

RF Probe Technology: History and Selected Topics

Micromachined On-Water Probes for Characterization of Terahertz Devices and Circuits

5-100 GHz InP coplanar waveguide MMIC distributed amplifier

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