[100]-textured growth of polycrystalline diamond films on alumina substrates by microwave plasma chemical vapor deposition

Wang, Linjun; Lu, Jinfang; Su, Qingfeng; Wu, Nanchun; Liu, Jianmin; Shi, Weimin; Xia, Yiben

doi:10.1016/j.matlet.2006.01.009

Cited by 11 publications

(4 citation statements)

References 19 publications

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“…While the ultrasonic scratching technique can be applied to 3D surfaces, the mechanical polishing is limited to only planar materials. This technique is now commonly used for growing diamond on ceramics [212][213][214][215][216][217][218][219] for various applications though electrostatic seeding have also been used on ceramics. 105,106…”

Section: Nucleation Through Surface Damagementioning

confidence: 99%

Nucleation of diamond films on heterogeneous substrates: a review

Mandal

2021

RSC Adv.

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Section: Nucleation Through Surface Damagementioning

confidence: 99%

Nucleation of diamond films on heterogeneous substrates: a review

Mandal

2021

RSC Adv.

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“…The growth rate of diamond facets varies in different growth directions, depending on the deposition temperature. When diamonds facets do not grow quickly, slower growth leaves residue on the facet surface during the deposition process varying the deposition parameters can produce pyramidal and needle-shaped structures [1][2][3]. However, many researchers have investigated CVD diamond films and their electrical and optical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Morphology of the Diamond Thin Films Grown by Microwave Plasma Chemical Vapor Deposition with Different Aftertreatments

Lai

Lee

2010

AMR

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Diamond films were deposited on (111) silicon wafers by microwave plasma chemical vapor deposition (MPCVD). The deposition parameters included a system power of 1200 W, chamber pressure of 110 torr, H2 flowing rate of 300 sccm, and a CH4 flowing rate of 15 sccm. The diamond particles measured about 5-6 μm, and morphology analysis revealed a rectangular structure stacked regularly on diamond films after deposition. X-ray diffraction (XRD) analysis detected (220) square structures. Annealing at 600 °C improved the quality of diamond film, making the peak of the Raman spectra at 1350 cm-1 sharper and higher. The (220) and (311) orientation structures on the diamond films decreased after annealing broke the surface morphology. To conduct electric and optical experiments conveniently, the deposited samples were immersed in acid (HNA, HF：HNO3：CH3COOH = 3：25：10) to remove the silicon layers. The HNA acid did not corrode diamond films seriously, but slightly damaged the incomplete (220) and (311) structures.

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“…Diamond films are deposited in many ways including laser ablation [2,3] and plasma discharge [4,5], but chemical vapor deposition (CVD) is the foremost technique for diamond synthesis. Several CVD based methods are also employed such as hot filament techniques [6,7], plasma enhanced CVD (PECVD) [8,9] and the use of a combustion-flame [10][11][12][13][14][15][16]. The most significant contribution towards synthesis of diamond at atmospheric pressure by use of oxygen-acetylene combustion-flame came through the work of Hirose [17,18].…”

Section: Introductionmentioning

confidence: 99%