High-Power Diode Laser Technology XVII 2019
DOI: 10.1117/12.2511255
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1000 W blue fiber-coupled diode-laser emitting at 450 nm

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Cited by 30 publications
(13 citation statements)
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“…Infrared diode lasers (λ ≈ 820 nm) provide higher absorption and can be increased at a shorter wavelength [62]. Emission of 450 nm wavelength (a blue laser) is preferable for highly reflective metals and proven on the industrial scale [63,64] (see Figure 6b). These lasers can be produced up to 2.0 kW, which is enough to weld more than 1 mm thick Cu.…”
Section: Thermophysical Properties Of Different Metals and Laser Beam Absorptionmentioning
confidence: 99%
“…Infrared diode lasers (λ ≈ 820 nm) provide higher absorption and can be increased at a shorter wavelength [62]. Emission of 450 nm wavelength (a blue laser) is preferable for highly reflective metals and proven on the industrial scale [63,64] (see Figure 6b). These lasers can be produced up to 2.0 kW, which is enough to weld more than 1 mm thick Cu.…”
Section: Thermophysical Properties Of Different Metals and Laser Beam Absorptionmentioning
confidence: 99%
“…After the first development of nitride laser diodes (LDs) in 1996 [1] and first demonstration of blue LDs in 2001 [2] by Nichia, the performance of blue LDs has improved considerably. To date, InGaN/GaN-based blue LDs have attracted significant attention for use in light sources for laser displays [3][4][5], laser-based white lighting [6][7][8], free-space or underwater communications [9][10][11], and laser-based materials processing [12][13][14]. In recent years, high-power operation of InGaN blue LDs with >5 W output power in a single chip has been demonstrated, mainly by company research groups such as Nichia, Osram, and Sony [3,4,12].…”
Section: Introductionmentioning
confidence: 99%
“…To date, InGaN/GaN-based blue LDs have attracted significant attention for use in light sources for laser displays [3][4][5], laser-based white lighting [6][7][8], free-space or underwater communications [9][10][11], and laser-based materials processing [12][13][14]. In recent years, high-power operation of InGaN blue LDs with >5 W output power in a single chip has been demonstrated, mainly by company research groups such as Nichia, Osram, and Sony [3,4,12]. They also reported the low-threshold and high-efficiency operation of blue LDs with a threshold current density (J th ) < 1 kA/cm 2 , slope efficiency (SE) > 2 W/A, and wall-plug efficiency (WPE) > 40% [3,12].…”
Section: Introductionmentioning
confidence: 99%
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“…The output power of the red LD stack can be as high as 56W and the optical-coupled module constructed by incoherent combination has a maximum output power of 100W (Andreas et al 2013). The blue LD bar has reached 98w, and the fiber-coupled module based on the bar has reached 1KW presented by Laserline and OSRAM in February 2019 (Baumann et al 2019). And in September 2020, Nuburu launch the latest blue fiber-coupled module (Feve J et al 2020), AI-1500, which increase the power to 1.5KW under 11 mm•mrad from a 100μm /0.22 numerical aperture (NA) fiber, taking a different approach that mounts Osram's GaN single-emitter diodes on a ship in series.…”
Section: Introductionmentioning
confidence: 99%