100W X-band GaN SSPA for medium power TWTA replacement

Casto, Matthew; Lampenfeld, Mark; Jia, Pengcheng; Courtney, Patrick; Behan, Scott; Daughenbaugh, Paul; Worley, R.

doi:10.1109/wamicon.2011.5872886

Cited by 16 publications

(5 citation statements)

References 2 publications

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“…In recent years, there has been extensive research replacing TWTAs with solid-state power amplifiers (SSPAs) thanks to the advancement of high-power transistor technologies such as gallium nitride (GaN) high electron mobility transistors (HEMTs). Compared to TWTAs, the SSPAs can allow advantages in terms of reliability, size, weight, and cost [2], [3]. However, output power available from a single SSPA is still very limited, especially at millimeter-wave frequencies, and thus power combining is essential for high-power power generation using a number of SSPAs.…”

Section: Introductionmentioning

confidence: 99%

Ka-Band Tray-Type Spatial Power Combiner Using H-Plane Expanded Waveguide With Side-Ridges

Park

Jeong

2023

IEEE Access

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A tray-type spatial power combiner is proposed at Ka-band using an H-plane expanded waveguide with side-ridges and a dipole transition array. In order to overcome the small size of the Ka-band standard waveguide and accommodate as many as trays (six trays in this work), the H-plane of the waveguide is expanded by three times using two-stepped waveguide transition. A circular post is employed to effectively suppress higher-order modes in the expanded waveguide. In addition, a side-ridged waveguide is proposed to reduce non-uniformity in the field and power distribution along the expanded H-plane which seriously degrades power combining efficiency. It boosts the electric field close to the waveguide sidewalls by adding the metallic ridges which reduces the waveguide height at the sides. It is shown from the simulation that the proposed side-ridged waveguide can evenly distribute the electromagnetic power and reduce the magnitude imbalances between the trays. In addition, a capacitive iris is introduced in the ridges to improve the phase balance as well. The H-plane expanded waveguide with side-ridges was fabricated and the measurement showed an insertion loss as low as 0.2 dB at Ka-band. Then, six trays consisting of dipole transition and microstrip line on the dielectric substrate was accommodated between the H-plane expanded waveguides with side-ridges. The overall power combining system exhibited the measured insertion loss of 1.2 dB (backto-back loss) at Ka-band. This result belongs to the excellent performance in terms of insertion loss and the number of the trays among the tray-type spatial power combiners reported at Ka-band.INDEX TERMS Expanded waveguide, millimeter-wave, spatial power combiner, waveguide transitions.

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Section: Introductionmentioning

confidence: 99%

Ka-Band Tray-Type Spatial Power Combiner Using H-Plane Expanded Waveguide With Side-Ridges

Park

Jeong

2023

IEEE Access

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“…In the decade, SSPAs using gallium nitride (GaN) high electron mobility transistors (HEMTs) are reported in [2][3][4][5][6][7][8][9][10]. A GaN HEMT is attractive for high power applications due to particular capabilities such as high output power, great efficiency, and smaller parasitic capacitances.…”

Section: Introductionmentioning

confidence: 99%

X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

Lee

Chang

Chou

et al. 2018

AEM

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An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

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“…The gallium-nitride high electron mobility transistor (GaN-HEMT) has been widely used for satellite communication systems and various military applications especially in the X-band [1][2][3]. Power amplifiers (PAs) based on GaN-HEMTs have high output power and high efficiency at high-frequency bands because of the relatively wide energy bandgap, high power density, and high electron mobility of the transistors [4].…”

Section: Introductionmentioning

confidence: 99%

X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs

Lee¹,

Lee²,

Kang³

et al. 2017

IET Microwaves, Antennas & Propagation

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This study presents an X‐band two‐stage Doherty power amplifier (DPA) using pre‐matched gallium‐nitride high electron mobility transistors (GaN‐HEMTs). The pre‐matched GaN‐HEMT includes partial matching circuits in the package using bond‐wires and capacitors. To obtain broad bandwidth and low loss, the pre‐matching circuits were carefully designed to have a low matching quality factor. The optimum second harmonic impedance, which was extracted from the harmonic source/load pull simulations, was applied to the pre‐matching circuits for high efficiency. Using the pre‐matched GaN‐HEMTs, an X‐band two‐stage power amplifier (PA) was designed and implemented. By combining two two‐stage PAs in parallel, a DPA was built. The implemented DPA exhibited a max gain of 25.5 dB and an output power from 42.5 to 45.8 dBm at the frequency band from 7.9 to 8.4 GHz. It also showed a high efficiency of 37.8% at the 6 dB back‐off output power level of 39.6 dBm.

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100W X-band GaN SSPA for medium power TWTA replacement

Cited by 16 publications

References 2 publications

Ka-Band Tray-Type Spatial Power Combiner Using H-Plane Expanded Waveguide With Side-Ridges

Ka-Band Tray-Type Spatial Power Combiner Using H-Plane Expanded Waveguide With Side-Ridges

X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs

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