1064 nm Wavelength p-i-n Photodiode with Low Influence of Periphery on Dark Currents

Kukurudziak, M. S.

doi:10.21272/jnep.14(1).01023

Cited by 7 publications

(9 citation statements)

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“…The key factor in their formation is an increase in the specific resistance of the base material, since with an increase in ρ of the material, a smaller amount of impurities is needed to change the surface conductivity to the opposite [16]. The technological reasons for the appearance of inversion are improper chemical treatment of substrates, the presence of alkali metal impurities in deionized water, quartz vessels, or a quartz reactor, and carrier gases.…”

Section: Discussion Of Researchmentioning

confidence: 99%

Silicon four element p-i-n photodiode with improved characteristics

Kukurudziak¹

2023

reks

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This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied. PDs with reduced gaps were modeled, samples were made according to the models, the parameters of the obtained PDs and the influence of various technological factors on their values were investigated. During research, it was established that the factor that limits the possibility of reducing the gaps is the insulation resistance between the responsive elements. The decrease in the insulation resistance between the PD elements was a consequence of the formation of inversion leakage channels at the Si-SiO2 interface, which is characteristic of high-resistance p-type silicon, the conductivity of which increased with a decrease in the width of the gaps. To increase the resistance of the gaps between the platforms and reduce the influence of inversion layers, it was decided to form regions of the restriction of the leakage channels between the REs – highly doped regions isotypic with the substrate material (p+-type). They will prevent the movement of current carriers that are generated in the inversion layers on the surface of the substrate. Four-element p-i-n photodiodes with 31 μm gaps between the sites were made. The proposed PD is not significantly inferior in parameters to analogues, but it is the sample with the smallest gaps between RE among photodiodes of the same type and size in the world market. The improvement of the insulation resistance between the REs made it possible to reduce the level of dark current of the PD by twice compared to serial products, with a slight decrease in responsivity due to the introduction of additional thermal operations into the technological route. In particular, the dark current density of the RE of experimental PDs was 40-80 nA/cm2, compared to 80-250 nA/cm2 for commercial samples. Impulse current monochromatic sensitivity at a wavelength of 1064 nm for experimental samples was 0.41-0.44 A/W, and for commercial ones - 0.45-0.48 A/W.

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Section: Discussion Of Researchmentioning

confidence: 99%

Silicon four element p-i-n photodiode with improved characteristics

Kukurudziak¹

2023

reks

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“…When using mesa-technology, it is possible to reduce the number of recombination centres and thermal shocks that reduce to the MCC lifetime by eliminating one thermal operation. Therefore, mesa-PD responsivity is higher than that of the PD made by planar technology, which also follows from formula (5), where the responsivity is directly proportional to τ [26]:…”

Section: Responsivitymentioning

confidence: 91%

“…Also, after comparing the level of responsitivity with the theoretically possible, it was seen that in the spectral maximum the responsitivity (S λmax ) of the PD meza -AZ4533 approaches the level of an ideal PD. The theoretically possible responsivity value can be determined by formula (5) [10]:…”

Section: Responsivitymentioning

confidence: 99%

“…with increasing ρ, τ will increase. However, as practice shows [5], the use of a material of high resistivity increases the probability of defects through scatter in values or instability of dark currents. As far as ρ of silicon increases, the concentration of defects or impurity ions decreases, and it can cause changes in the inverse characteristics of the devices.…”

Section: Introductionmentioning

confidence: 99%

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High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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Silicon p-i-n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso technology were investigated. Photodiodes with a meso structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

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“…This test is performed to a greater extent to assess IGR at elevated temperatures, namely its stability. After all, sometimes there may be some instability of GR dark current, caused by charge states at Si-SiO2 interface, which is not observed at room temperature [11]. This instability can be manifested as a slight slow increase in IGR relative to the initial (from the moment of application of voltage) and uncontrolled avalanche-like growth.…”

Section: Dark Currents At T = 85˚c Re Capacitance Interconnection Res...mentioning

confidence: 99%

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

Kukurudziak

2022

Phys. Chem. Solid St.

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Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is obtained. The influence of charge carrier concentration in this layer on the dark currents of responsive elements and the guard ring was studied. Volt-ampere characteristics of photodiodes were measured. It was seen that when the surface resistance of the n+-layer decreases, the dark currents decrease, the samples with a surface resistance of 1,9 – 2,4 Ohm / □ have approximately the same level of dark currents of responsive areas, i.e. further increase in charge carrier concentration makes no change. As to dark currents of photodiode guard rings, it was found that for the most part they depend on the state of the crystal periphery but not on the level of doping. The influence of the surface resistance of the n+-layer on interconnection resistance between the responsive areas and the protective ring, and no influence on the capacitance of the photodiodes were revealed.

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1064 nm Wavelength p-i-n Photodiode with Low Influence of Periphery on Dark Currents

Cited by 7 publications

References 0 publications

Silicon four element p-i-n photodiode with improved characteristics

Silicon four element p-i-n photodiode with improved characteristics

High-responsivity silicon p–i–n mesa-photodiode

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

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