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The conditions for the production of rectifying anisotyped heterostructures ZnO:Al/p-Cd 1-x Zn x Te by the method of RF-magnetron sputtering of ZnO:Al films onto crystalline substrates p-Cd 1-x Zn x Te were investigated. High energy parameters of the barrier were realized by preliminary heat treatment of the substrates. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V-characteristics. Based on the researches of C-V-characteristics, the interconnection between physical processes during heat treatment was established, which makes possible to avoid the negative influence of the differences between crystalline materials lattices on the heterojunctions. Suggested models of energy diagrams of the manufactured heterostructures are well describe experimental electrophysical phenomena.

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