Electrical and optical properties of TiN thin films

Solovan, M. N.; Брус, В. В.; Майструк, Э. В.; Maryanchuk, P. D.

doi:10.1134/s0020168514010178

Cited by 102 publications

(48 citation statements)

References 12 publications

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“…The calculated electrical conductivities of all the tested films are in the range of 4–4.5 × 10 5 S m −1 . The temperature dependence of the TiN resistivity in the range of −10 to 60 °C was also investigated and found to be linear (inset in Figure d), which is consistent with the work of Solovan et al The temperature coefficient of electrical resistance (TCR) at 20 °C is as low as 9.7 × 10 −4 °C −1 . Assuming that the bulk electrical conductivity in the ab ‐direction is that of graphite (3 × 10 5 S m −1 ), the carrier transport rate is not limited by a 1 µm thick TiN film combined with graphite electrodes with thicknesses of up to 440 µm.…”

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confidence: 86%

Aluminum Chloride‐Graphite Batteries with Flexible Current Collectors Prepared from Earth‐Abundant Elements

et al. 2018

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In the search for low‐cost and large‐scale stationary storage of electricity, nonaqueous aluminum chloride‐graphite batteries (AlCl3‐GBs) have received much attention due to the high natural abundances of their primary constituents, facile manufacturing, and high energy densities. Much research has focused on the judicious selection of graphite cathode materials, leading to the most notable recent advances in the performance of AlCl3‐GBs. However, the major obstacle to commercializing this technology is the lack of oxidatively stable, inexpensive current collectors that can operate in chloroaluminate ionic liquids and are composed of earth‐abundant elements. This study presents the use of titanium nitride (TiN) as a compelling material for this purpose. Flexible current collectors can be fabricated by coating TiN on stainless steel or flexible polyimide substrates by low‐cost, rapid, scalable methods such as magnetron sputtering. When these current collectors are used in AlCl3‐GB coin or pouch cells, stable cathodic operation is observed at voltages of up to 2.5 V versus Al3+/Al. Furthermore, these batteries have a high coulombic efficiency of 99.5%, power density of 4500 W kg−1, and cyclability of at least 500 cycles.

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confidence: 86%

Aluminum Chloride‐Graphite Batteries with Flexible Current Collectors Prepared from Earth‐Abundant Elements

et al. 2018

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“…Higher absorption efficiency in the UV and visible range of 250–800 nm is demonstrated by the composites based on titanium and chromium nitrides. The higher absorption efficiency of the composite containing titanium nitride phase in visible spectrum can be explained by the formation of Ti‐N bond …”

Section: Resultsmentioning

confidence: 99%

Metal‐Ceramic Composites for Photocatalytic Oxidation of Diclofenac in Aqueous Solution

et al. 2020

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Photocatalytic activity of metal‐ceramic composites synthesized by self‐propagating high‐temperature synthesis (SHS) is investigated in the processes of degradation of diclofenac (DCF). Optical properties of the composites were studied, and the band gaps of ceramic matrix semiconducting components were calculated from the absorbance spectra. The effect of the phase composition, UV irradiation duration, the nature and quantity of the activator (H2C2O4 and H2O2) on the degree of oxidation destruction was investigated. The best catalytic performance (98–99 % DCF degradation) was achieved with the combination of heterogeneous boron nitride and SiAlON based composites and a homogeneous photo‐Fenton system. However, DCF decomposition with a minimum number of intermediates was achieved using boron nitride‐based composites.

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“…Once the photodiode performance is established, the stack is transferred to Si/SiO 2 substrates with metal bottom contact to imitate the CMOS ROIC architecture. TiN is used as the contact as it is one of the standard materials in the CMOS flow [ 21 ]. Here, we adjust the stack to operate in top illumination condition, which includes changing the top contact to a stack that is as transparent as possible in the wavelength range of interest and tuning the thicknesses of all layers to harness the maximum amount of incoming light [ 22 ].…”

Section: Methodsmentioning

confidence: 99%

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors

Malinowski

Georgitzikis

Maes

et al. 2017

Sensors

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Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10−6 A/cm2 at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

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Electrical and optical properties of TiN thin films

Cited by 102 publications

References 12 publications

Aluminum Chloride‐Graphite Batteries with Flexible Current Collectors Prepared from Earth‐Abundant Elements

Aluminum Chloride‐Graphite Batteries with Flexible Current Collectors Prepared from Earth‐Abundant Elements

Metal‐Ceramic Composites for Photocatalytic Oxidation of Diclofenac in Aqueous Solution

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors

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