108–316- and 220–290-GHz Ultrabroadband Distributed Frequency Doublers

Lee, Iljin; Kim, Younghwan; Jeon, Sanggeun

doi:10.1109/tmtt.2019.2951105

Cited by 8 publications

(2 citation statements)

References 38 publications

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“…Recently, the lower end of the submillimeter-wave band has been actively developed owing to the advancement of transistor technologies. As a result, several submillimeterwave frequency multipliers based on the transistors were reported in the WR-3.4 (220-325 GHz) [4]- [6], WR-2.2 (325-500 GHz) [7]- [8], and WR-1.5 (500-750 GHz) bands [9]- [11].…”

Section: Introductionmentioning

confidence: 99%

A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network

et al. 2023

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A 0.78-0.91-THz wideband frequency tripler is demonstrated using a 250-nm InP DHBT technology. Considering potential inaccuracy of the transistor model at the submillimeter-wave frequencies, a simple one-stage common-emitter topology is adopted for the wideband and stable operation. To enhance the output power and suppress the unwanted harmonics, a harmonic-matched bias network is used for dc feed at the output. The frequency tripler was measured with an on-chip probing method. Although an overmode waveguide probe was used, which imposes an additional measurement loss, a peak output power was measured as -28 dBm at 0.813 THz. The bandwidth for a -35-dBm output power ranges from 0.78 to 0.91 THz. The conversion loss is from 35.9 to 45 dB over the bandwidth. The chip area is 273 × 460 μm 2 and the dc power consumption is 22 mW. INDEX TERMSFrequency tripler, InP DHBT, wideband submillimeter-wave source, WR-1.0 band.

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Section: Introductionmentioning

confidence: 99%

A 0.78–0.91–THz Wideband Frequency Tripler With Harmonic-Matched Bias Network

et al. 2023

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“…As the demand for wideband transceivers increases, research studies to obtain wideband characteristics by adopting a distributed amplifier design to not only amplifiers such as power amplifiers (PAs) and low noise amplifiers (LNAs), but also other RF components such as mixers, doublers, switches, and true-time delay circuits are being actively conducted [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

A Wideband and Low-Power Distributed Cascode Mixer Using Inductive Feedback

Kim

2022

Sensors

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A wideband and low-power distributed cascode mixer is implemented for future mobile communications. The distributed design inspired by the distributed amplifier (DA) enables a mixer to operate in a wide band. In addition, the cascode structure and inductive positive feedback design allow high conversion gain with low-power consumption. The proposed mixer is fabricated using a 130 nm commercial complementary metal-oxide-semiconductor (CMOS) process. It consists of three cascode gain cells and operates with a drain voltage of 1.5 V and a gate voltage of 0.5 to 0.7 V. The fabricated mixer exhibits conversion gain of −2.9 to 3.1 dB at the radio frequencies (RFs) of 4 to 30 GHz and −1.9 to 0.4 dB at RFs of 54 to 66 GHz under the conditions of 8 to 10 dBm of local oscillator (LO) power and 650 MHz of intermediate frequency (IF). The LO-RF isolation is more than 15 dB over the entire measurement band (0.2 to 67 GHz) as the RF and LO signals are applied to different transistors owing to the cascode structure. The total power consumption is only within 12 mW, and the chip size is 0.056 mm2, making it possible to implement a compact mixer. The proposed mixer shows broadband characteristics covering from ultra-wideband (UWB) and the 28 GHz fifth-generation (5G) communication band to the 60 GHz wireless gigabit alliance (WiGig) band.

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