This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-μm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360° digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360° with a step of 22.5°. Each chip area of the transmitter and receiver is 4.2 × 2.8 mm2.

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This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (fmax) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of −5.5 dB and a saturated output power of −7.5 dBm at 184 GHz. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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