A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology

Lee, Iljin; Kim, Jeong Hyun; Jeon, Sanggeun

doi:10.5515/jkiees.2017.17.3.147

Cited by 3 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, there has been extensive research on THz applications in various fields, such as high-speed communications, non-destructive inspections, spectroscopy, and medical imaging [2][3][4]. THz monolithic integrated circuits (TMICs), such as power amplifiers, multipliers, mixers, and antennas, have been successfully developed using advanced transistor technologies, such as a complementary metal oxide semiconductor (CMOS), gallium arsenide (GaAs) high-electron mobility transistors (HEMTs), and indium phosphide (InP) heterojunction bipolar transistors (HBTs) [5][6][7][8][9][10]. These semiconductor-based technologies allow the production of low-cost, compact, portable, and mass-producible THz systems.…”

Section: Introductionmentioning

confidence: 99%

A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Choe

Jeong

2018

Electronics

View full text Add to dashboard Cite

A waveguide-to-microstrip transition is an essential component for packaging integrated circuits (ICs) in rectangular waveguides, especially at millimeter-wave and terahertz (THz) frequencies. At THz frequencies, the on-chip transitions, which are monolithically integrated in ICs are preferred to off-chip transitions, as the former can eliminate the wire-bonding process, which can cause severe impedance mismatch and additional insertion loss of the transitions. Therefore, on-chip transitions can allow the production of low cost and repeatable THz modules. However, on-chip transitions show limited performance in insertion loss and bandwidth, more seriously, this is an in-band resonance issue. These problems are mainly caused by the substrate used in the THz ICs, such as an indium phosphide (InP), which exhibits a high dielectric constant, high dielectric loss, and high thickness, compared with the size of THz waveguides. In this work, we propose a broadband THz on-chip transition using a dipole antenna with an integrated balun in the InP substrate. The transition is designed using three-dimensional electromagnetic (EM) simulations based on the equivalent circuit model. We show that in-band resonances can be induced within the InP substrate and also prove that backside vias can effectively eliminate these resonances. Measurement of the fabricated on-chip transition in 250 nm InP heterojunction bipolar transistor (HBT) technology, shows wideband impedance match and low insertion loss at H-band frequencies (220–320 GHz), without in-band resonances, due to the properly placed backside vias.

show abstract

Section: Introductionmentioning

confidence: 99%

A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Choe

Jeong

2018

Electronics

View full text Add to dashboard Cite

show abstract

“…The role of the on/off-chip decaps is vital for the reductions of the power supply coupling noises in ICs [26,27]. Such decaps are also used to prevent the oxide breakdown [28], power-ground noises [29] and conducted noises [14] due to a transient ESD event.…”

Section: Analysis Of Effect Of Decaps On Coupled Noise On Sensitive Nmentioning

confidence: 99%

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

et al. 2019

View full text Add to dashboard Cite

This paper presents, for the first time, a comprehensive detailed design of experiment (DOE) based system level electrostatic discharge (ESD) coupling analysis of high-speed dynamic random access (DRAM) memory modules. The sensitive traces and planes on the high-speed DRAM modules (DDR3 and DDR4) against injected ESD noise are determined through full-wave numerical simulations of the memory modules using the developed 3D model of the ESD gun. The validity of the full-wave numerical setup is confirmed through measurements, prior to the DOE analysis. Besides, current distribution analysis of DRAMs, seven different DOE configurations based on the number of installed decoupling capacitors (decaps) and their values on memory modules, are analyzed. The findings of DOE analysis suggests that DDR4 is less susceptible (70–80 % less) to the coupled ESD noise compared to DDR3. In addition, the command address (CA) nets are most sensitive in both memory modules. The utilization of the maximum possible number of decaps covering low, medium and high frequency ranges, as well as separate power and ground layers in memory stack-up design, increase the robustness and immunity of memory modules for the transient ESD event. The suggested approach offers time-saving and financial advantages to high-speed memory community, with the robust design of the memory products at the design stage before the start of the production phase.

show abstract

“…Recently, there has been active research on terahertz (THz) communication, sensing, and imaging systems using semi-conductor transistor technologies such as silicon (Si) complementary metal-oxide semiconductor (CMOS) field effect transistors (FETs), gallium arsenide (GaAs) or indium phosphide (InP) heterojunction bipolar transistors (HBTs), and high-electron mobility transistors (HEMTs) [ 1 , 2 , 3 , 4 ]. The THz monolithic integrated circuits (TMICs) that use these technologies allow for lower cost, higher integration, and miniaturization of THz systems, compared with optics-based components [ 5 , 6 , 7 , 8 , 9 , 10 ].…”

Section: Introductionmentioning

confidence: 99%

A Terahertz CMOS V-Shaped Patch Antenna with Defected Ground Structure

Kim

Choe

Jeong

2018

Sensors

View full text Add to dashboard Cite

In this paper, a V-shaped patch antenna with defected ground structure is proposed at terahertz to overcome the limited performance of a standard complementary metal-oxide semiconductor (CMOS) patch antenna consisting of several metal layers and very thin interdielectric layers. The proposed V-shaped patch with slots allows the increased radiation resistance and broadband performance. In addition, the patch resonating at different frequency from the V-shaped patch is stacked on the top to broaden the impedance-matching bandwidth. More importantly, the slots are formed in the ground plane, which is called the defected ground structure, to further increase the radiation resistance and thus improve the bandwidth and efficiency. It is verified from electromagnetic simulations that the leakage waves from the defected ground can enhance the antenna directivity and gain by coherently interfering with the topside radiation. The proposed on-chip antenna is fabricated using a standard 65 nm CMOS process. The on-wafer measurement shows very wide bandwidth in input reflection coefficient (<−10 dB), greater than 28.7% from 240 to >320 GHz. The measured peak gain was as high as 5.48 dBi at 295 GHz. To the best of the authors’ knowledge, these results belong to the best performance among the terahertz CMOS on-chip antennas without using additional components or processes such as dielectric resonators, lens, or substrate thinning.

show abstract

A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology

Cited by 3 publications

References 6 publications

A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

A Broadband THz On-Chip Transition Using a Dipole Antenna with Integrated Balun

Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules

A Terahertz CMOS V-Shaped Patch Antenna with Defected Ground Structure

Contact Info

Product

Resources

About