110-120-GHz monolithic low-noise amplifiers

Abstract

This paper presents the results of two GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-_tm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-.dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-l.tm gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.

An 85–120 GHz high-gain and wide-band InP MMIC amplifier

“…High-gain, wide-band and low power consumption are necessary for the MMIC amplifiers. Many W-band and D-band even much higher frequency bands MMIC amplifiers have been reported over the world [1,2,3,4,5,6,7,8,9,10,11]. Compared with GaAs and other materials based devices, InP-based PHEMTs have shown the excellent performance of highgain, wide-band, and low noise beyond 100 GHz [3,11].…”

A novel large-signal model for InP MMIC applications at 110 GHz

“…They are of great interest for high-resolution imaging, environmental sensor, security detection, broadband satellite communication applications [3]. InP-based PHEMTs have shown more excellent performance of high-gain, wide-band, and low noise than the GaAs-based beyond 100 GHz, thus MMICs based on InP PHEMTs have been reported over the world [1,3,4,5,6,7,8].…”