A quantitative comparison of multiline TRL (thru-reflect-line) and LRM (line-reflect-match) on-wafer calibrations for scattering parameters (S-parameters) measurement of InP-based PHEMTs is presented. The comparison is undertaken for the first time and covers a frequency range from 70 kHz to 110 GHz. It is demonstrated that the accuracy of multiline TRL and LRM calibration is in good agreement. Both methods outperform the conventional SOLT calibration in the full frequency band up to 110 GHz. Then the excellent RF performance is obtained by extrapolation on the basis of inflection point, including a maximum current gain cut-off frequency f t of 247 GHz and a maximum oscillation frequency f max of 392 GHz. The small-signal model based on LRM calibration is established as well. The S -parameters of the model are consistent with the measured from 1 to 110 GHz.

This paper presented the development of a novel large-signal equivalent circuit model for InP-based pseudomorphic high electron mobility transistor (PHEMT) MMIC applications beyond 100 GHz. A new set of I-V functions was built in the large-signal model to depict accurately the measured I-V results of this device. The convergence of the model was good during the HB (harmonic balance) simulation. To verify the feasibility of the large-signal model, a 110 GHz MMIC amplifier based on this large-signal model was designed and fabricated, the on-wafer measured large-signal results, which include Pout, Gain and PAE (Power Add Efficiency), were consistent with the simulated ones at 110 GHz. Thus, this new large-signal model has a great potential for InP MMIC applications beyond 100 GHz.

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This paper presents the development of an 85-120 GHz highgain and wide-band monolithic millimeter-wave integrated circuit (MMIC) amplifier using our own improved 70-nm InP pseudomorphic high electron mobility transistor (PHEMT) with f t = 247 GHz and f max = 392 GHz. Edgecoupled line is used for DC blocking and radial subs are employed for RF bypass. Shunt RC networks and radial stubs are included in the bias circuitry to maintain amplifier stability. This amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92 GHz and greater than 11.5 dB from 85 to 120 GHz. The 3 dB bandwidth is above 35 GHz with a chip size of 1.6 × 1.1 mm 2 . To our knowledge, this MMIC amplifier has characteristics of much higher-gain per stage, wider-band and smaller chip size than others at the similar frequency band. The excellent results indicate that this MMIC amplifier has a great potential for pre-amplifier or interstage driving amplifiers applications at W-band or D-band.