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70-nm T-gate InP-based low noise In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As pseudomorphic high electron mobility transistor (PHEMT) with well-balanced cutoff frequency f t and maximum oscillation frequency f max were designed and fabricated. DC, RF, and noise characterizations are demonstrated. The maximum saturation current density I dss and maximum extrinsic transconductance g m,max are measured to be 894 mA/mm and 1640 mS/mm, respectively. And the extrapolated f t and f max based on inflection point were 247 GHz and 392 GHz, respectively. Due to the disadvantages of traditionally used Y-factor method, the new cold-source method was adopted to measure the noise parameters. The minimum noise figure (NF min ) is 1 dB at 30 GHz associated with a gain of 15 dB at V ds of 0.8 V and I ds of 17 mA. These excellent results make this InP-based PHEMT one of the most suitable devices for millimeter wave low noise applications.

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An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with the results of self-consistent solution and experimental data, but take much shorter computing time than the self-consistent solution method. This indicates that the model can be used for analysis of gate-leakage properties of MOS devices with not only SiO2 but also high-k materials as gate dielectric and high-k gate dielectric stack structures, and circuit simulation of MOS devices.

A multiple-pole electro-thermal equivalent subcircuit model of power GaN HEMT is proposed. A quick and reliable electrical approach for direct extraction of thermal resistances and thermal capacitances is presented. Good agreement between measured and simulated I-V characteristics with thermal effect validates the electro-thermal model. T c = Pdiss • Rth + T aWhere,