(111)-oriented Pb(Zr,Ti)O3 films deposited on SrRuO3∕Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

Abstract

Articles you may be interested inSome unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films J. Appl. Phys. 116, 094101 (2014); 10.1063/1.4894811 Voltage induced acoustic resonance in metal organic chemical vapor deposition SrTiO3 thin film J. Vac. Sci. Technol. B 30, 061202 (2012); 10.1116/1.4757129 Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb ( Zr , Ti ) O 3 films grown on (100) SrTiO 3 substrates by metal organic chemical vapor deposition J. Appl. Phys. 105, 014107 (2009); 10.1063/1.3056138 1 V saturated Pb ( Zr , Ti ) O 3 films with (111) orientation using lattice-matched ( 111 ) SrRuO 3 / ( 111 ) Pt bottom electrode prepared by pulsed metal organic chemical vapor deposition͑111͒-textured Pb͑Zr 0.4 Ti 0.6 ͒O 3 films ͑thickness of ϳ120 nm͒ were deposited on ͑111͒-oriented SrRuO 3 bottom electrodes by pulse metal organic chemical vapor deposition ͑MOCVD͒. PZT single phase was evidenced over a large range of Pb precursor input rate into the MOCVD chamber. In this process window, the good control of the ͑111͒ texture of PZT films was confirmed. It is shown that the control of both the composition and orientation of PZT films leads to reproducible electric properties ͑P r , V c , resistance to fatigue͒ across the process window. Furthermore, the impact of the top electrode chemical nature, elaboration process, and annealing process upon the electric properties was studied systematically.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

“…16 However, replacing them with ferroelectric thin film oxides such as PZT, along with the compact silicon photonic platform, could be an alternative to realize smaller, functional and power efficient devices. 10,17−19 A variety of methods has been used to develop ferroelectric thin films: chemical solution deposition (CSD), 20 RF magnetron sputtering, 21 metal organic chemical vapor deposition (MOCVD) 22 and pulsed laser deposition (PLD). 23 However, the direct deposition of PZT on silicon still remains a challenge.…”

“…A variety of methods has been used to develop ferroelectric thin films: chemical solution deposition (CSD), RF magnetron sputtering, metal organic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD) . However, the direct deposition of PZT on silicon still remains a challenge.…”

Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal–Organic Chemical Vapor Deposition

“…As expected, there is no noticeable degradation up to 1 Â 10 9 switching cycles for SrRuO 3 / PZT/SrRuO 3 capacitors, while noticeable degradation was observed above 1 Â 10 3 switching cycles for Pt/PZT/ SrRuO 3 capacitors. The difference in the fatigue endurance by the top electrode was also observed for the PZT films deposited at 540 C on the same substrates 8) and is thought to be due to the difference in the concentration of the oxygen vacancies in PZT films near the interface between PZT and the electrode; a higher concentration of oxygen vacancies generated near the Pt/PZT interface fixed the polarization switching by the switching cycles, which results in the degradation of P r values, while lower concentration of oxygen vacancies near the SrRuO 3 /PZT interface did not drastically inhibit the polarization switching. 9) These results show that 415 C-deposited PZT films with (111) orientation showed good ferroelectricity as well as good fatigue endurance after annealing at 500 C.…”

Epitaxially grown ferroelectric thin films for memory applications (ferroelectric random access memories)

“…We demonstrated epitaxial Pb(Zr, Ti)O 3 films with various Zr/(Zr þ Ti) ratios grown on conductive SrRuO 3 covered or noncovered SrTiO 3 single crystal substrates with various orientations by metal organic chemical vapor deposition (MOCVD). From the viewpoint of growing tetragonal Pb(Zr, Ti)O 3 films, MOCVD has the advantages of large compositional reproducibility due to its large process windows and high-quality film growth without high-energy particles during deposition [5].…”