112Gb/s DP-QPSK Transmission Over 2427km SSMF Using Small-Size Silicon Photonic IQ Modulator and Low-Power CMOS Driver

Milivojevic, B.; Raabe, Christian; Shastri, Anujit; Webster, M.; Metz, Peter; Sunder, S.; Chattin, Bill; Wiese, Stefan; Dama, B.; Shastri, K.R.

doi:10.1364/ofc.2013.oth1d.1

Cited by 52 publications

(42 citation statements)

References 5 publications

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“…To the best of our knowledge, this PIC is the first monolithic single-chip dual-polarization I/Q modulator, with highest photonic integration in this particular application. Single-polarization silicon I/Q modulators were also reported from other groups/companies with comparable performance to those LiNbO 3 -based coherent modulators [72][73][74]. Combining the dual-polarization silicon I/Q modulators and the silicon receiver based on on-chip polarization elements, Dong et al reported a 2560-km SFM transmission of a 112 Gb/s PDM-QPSK signal [75], validating the readiness of silicon PICs in optical coherent links.…”

Section: Coherent Transmittersmentioning

confidence: 76%

Silicon photonic devices and integrated circuits

Dong¹,

Chen²,

et al. 2014

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Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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Section: Coherent Transmittersmentioning

confidence: 76%

Silicon photonic devices and integrated circuits

Dong¹,

Chen²,

et al. 2014

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“…Silicon photonics is an especially attractive integration platform for such devices: The high refractive index contrast of silicon-on-insulator (SOI) waveguides allows for compact devices and high integration density, while mature CMOS processing enables fabless mass production and opens a path towards large-scale co-integration with electronics [1,2]. Since the intrinsic inversion symmetry of the silicon crystal lattice prohibits any technically relevant secondorder nonlinearities, current high-speed silicon MZM have to rely on carrier injection or depletion in reverse-biased p-n junctions that are integrated into the waveguide core [3,4]. This leads to rather low modulation efficiencies with minimum voltage-length products of the order of U π L = 10 Vmm [5] and results in comparatively large, millimeter-long modulators which still require high drive voltages of up to 5 V [6].…”

Section: Introductionmentioning

confidence: 99%

Generation of 64 GBd 4ASK signals using a silicon-organic hybrid modulator at 80°C

et al. 2016

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Abstract:We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator (MZM) generating four-level amplitude shift keying (4ASK) signals at symbol rates of up to 64 GBd both at room temperature and at an elevated temperature of 80 °C. The measured line rate of 128 Gbit/s corresponds to the highest value demonstrated for silicon-based MZM so far. We report bit error ratios of 10 −10 (64 GBd BPSK), 10 −5 (36 GBd 4ASK), and 4 × 10 −3 (64 GBd 4ASK) at room temperature. At 80 °C, the respective bit error ratios are 10 −10 , 10 −4 , and 1.3 × 10 −2 . The hightemperature experiments were performed in regular oxygen-rich ambient atmosphere. ©2016 Optical Society of America

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“…These are remarkable results, but the potential for further optimization towards lower drive voltages, reduced energy consumption and smaller footprint seems to be limited by the intrinsically rather low modulation efficiency of depletion-type phase shifters -the voltage-length product of the device [8] amounts to U π L = 24 Vmm. Drive voltages can be reduced at the expense of an increased drive current by replacing the pn-junction with a high-capacitance metal-oxidesemiconductor structure [9]. Such devices require drive voltages of only 1 V pp , but have hitherto been demonstrated for QPSK modulation only.…”

Section: Introductionmentioning

confidence: 99%

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

et al. 2014

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Abstract:We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V pp . For the 16QAM experiment at 112 Gbit/s, we measure a bit error ratio of 5.1 × 10 ˗5 and a record-low energy consumption of only 19 fJ/bit. Shastri, "112Gb/s DP-QPSK transmission over 2427km SSMF using small-size silicon photonic IQ modulator and low-power CMOS driver," in Optical Fiber Communication Conference, 2013 (OSA, 2013 Freude, C. Koos, and J. Leuthold, "Low-loss silicon strip-to-slot mode converters," IEEE Photon. J. 5(1), 2200409 (2013). 32. F. Derr, "Coherent optical QPSK intradyne system: concept and digital receiver realization," J. LightwaveTechnol. 10(9), 1290-1296 (1992 Huebner, C. Koos, J. Becker, W. Freude, and J. Leuthold, "Error vector magnitude as a performance measure for advanced modulation formats," IEEE Photon.

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112Gb/s DP-QPSK Transmission Over 2427km SSMF Using Small-Size Silicon Photonic IQ Modulator and Low-Power CMOS Driver

Cited by 52 publications

References 5 publications

Silicon photonic devices and integrated circuits

Silicon photonic devices and integrated circuits

Generation of 64 GBd 4ASK signals using a silicon-organic hybrid modulator at 80°C

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

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