2010
DOI: 10.1002/smll.201000522
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12‐GHz Thin‐Film Transistors on Transferrable Silicon Nanomembranes for High‐Performance Flexible Electronics

Abstract: Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channe… Show more

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Cited by 143 publications
(116 citation statements)
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“…63,64 High-speed flexible electronic devices, some with operating frequencies that exceed 1 GHz, including MOSFETs, PIN diodes, single-pole single-throw switches can be realized with these and other Si NMs. [66][67][68] By use of other SOI-like substrates, Ge NMs can be interesting for photodetection due to high-absorption over a wide range of wavelengths. 69 Flexible arrays of PIN photodetectors fabricated with Ge NMs from germanium on insulator wafer (GeOI) offer excellent performance even after the severe bending.…”
Section: Bottom-up Approachesmentioning
confidence: 99%
“…63,64 High-speed flexible electronic devices, some with operating frequencies that exceed 1 GHz, including MOSFETs, PIN diodes, single-pole single-throw switches can be realized with these and other Si NMs. [66][67][68] By use of other SOI-like substrates, Ge NMs can be interesting for photodetection due to high-absorption over a wide range of wavelengths. 69 Flexible arrays of PIN photodetectors fabricated with Ge NMs from germanium on insulator wafer (GeOI) offer excellent performance even after the severe bending.…”
Section: Bottom-up Approachesmentioning
confidence: 99%
“…The alignment procedure was repeated until the entire chip was exposed. This local alignment allowed us to fabricate TFTs on PET with gate lengths as small as 1 μm [13]. Remarkable device speed, 12 GHz, has been achieved as shown in Figure 2(e).…”
Section: Methodsmentioning
confidence: 93%
“…Both organic and inorganic materials are utilized in flexible electronics. It is common practice to incorporate a hybrid of organic and inorganic materials to meet the requirements of specific applications [7][8][9].…”
Section: Populärvetenskaplig Sammanfattningmentioning
confidence: 99%
“…Several flexible diode and transistor structures with GHz operation range have been demonstrated based on silicon. The suggested fabrication processes for these devices include modifying silicon wafers into ribbons or thinning them until they are flexible, using peel-and-stick, lift-off or transfer printing techniques, depositing silicon nanomembranes, or solution processing of silanes followed by annealing [8,9,23,[34][35][36][37][38][39][40]. Besides silicon, other materials such as ZnO, Ge and indium-gallium-zinc-oxide have also been used for high frequency (HF) or UHF devices [41][42][43].…”
Section: Motivation and Goalmentioning
confidence: 99%