Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

Seo, Jung‐Hun; Yuan, Hao; Sun, Lei; Zhou, Weidong; Ma, Zhenqiang

doi:10.1080/15980316.2011.568713

Cited by 4 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A major challenge in integrating Si NMs for functional device applications is its extremely precise relocation from parent wafers to device platform maintaining proper orientation, position and with high throughput [24,43,61,77,78,[82][83][84]. Transfer printing is the most-developed and widely used integration strategy where soft, elastomeric stamps such as (poly)dimethylsiloxane (PDMS) are used to release the Si NMs from their parent wafer and then deliver them to any kind of device platform in precise, oriented and non-destructive manner [85,86].…”

Section: Transfer Printingmentioning

confidence: 99%

Si nanomebranes: Material properties and applications

2021

View full text Add to dashboard Cite

Silicon (Si) has widely been used as an essential material in the modern semiconductor industry. Recently, new attempts have been actively made to apply Si to a variety of fields such as flexible electronic devices and biosensors by manufacturing Si nanomembranes (NMs) having nanometer thickness. In particular, as the thickness of Si is reduced to a nanometer scale, its mechanical, electrical, and optical properties differ from that of its bulk form, which provides opportunities for the development of new conceptual devices. In this review, we present recent advances in Si NM technology that exhibit functional features different from the bulk materials. In addition, we discuss the opportunities and current challenges related to this field. KEYWORDSSi nanomebranes, flexible electronics, bio-integrated electronics, Si optoelectronics, strain engineering Fabrication of Si nanomenbranesSi being a traditional semiconductor, is widely available for scientific and manufacturing purpose, in the form of rigid and brittle wafers. To fabricate mechanically flexible and stretchable Si membranes having thickness of few nanometers is, however, quite a challenging task. Flexible and stretchable silicon nanomembranes are fabricated by using the following

show abstract

Section: Transfer Printingmentioning

confidence: 99%

Si nanomebranes: Material properties and applications

2021

View full text Add to dashboard Cite

show abstract

Nanoribbon‐Based Flexible High‐Performance Transistors Fabricated at Room Temperature

Zumeit

Navaraj

Shakthivel

et al. 2020

Adv Elect Materials

View full text Add to dashboard Cite

if their application is limited to small and compact areas as for economic reasons and integration related difficulties it is not practical to have them over the large areas. As a result, the printed devices and circuits based on nanostructures (NSs) of highmobility materials such as Si nanowires (NWs), Si nanoribbons (NRs), carbon nanotubes (CNTs), GaAs NWs, etc. have been explored. [12][13][14] The excellent performance (e.g., high mobility and On/Off ratio) offered by some of the NS-based devices is summarized in Table 1. A major challenge with NSs based devices is that some of the critical fabrication steps (e.g., NSs fabrication/growth, doping, high-k dielectric deposition) require high-temperatures that are incompatible with the flexible substrates such as plastics.Currently, the popular method to address this issue is to transfer print NSs from the native or growth substrates to the receiving flexible substrate using a stamp or career substrate. [12,15,16] Since the high temperature fabrication steps are carried out before transfer (i.e., when NSs are still on the native or growth substrates), this method decouples the high temperature process steps from the low-temperature steps (e.g., metallization) that are carried out after transfer to realize devices on flexible substrates, as shown in Figure 1. Previous works have carried out most of the steps, including high temperature dielectric deposition which yielded good device characteristics, [17,18] before transfer printing. Transfer printing of such fully formed field effect transistors (FETs) increases the process complexities which also raises the technology cost. An alternative method is to use substrates such as metal foils, which can withstand higher processing temperatures. However, additional fabrication steps such as insulation on foils increase the cost of fabrication and for this reason manufacturing through low-temperature processing steps is preferred. The low-temperature processing keeps the transfer printing process highly robust and could aid fabrication of FETs over large area flexible substrates as it is compatible with methods such as roll-to-roll technology. Thus, key challenge is to develop high-performance NRFET by dielectric deposition preferably at room temperature (RT). Many experimental techniques, such as atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced (PE)-CVD, inductively coupled plasma (ICP)-CVD, e-beam evaporation, etc., have been successfully used to develop high quality dielectric films in the past. [19] ALD and LPCVD techniques typically use growth temperatures in Si-nanoribbon-based high-performance field-effect transistors (FETs) with room temperature (RT)-deposited dielectric are presented. The distinct feature of these devices is that the high-quality SiN x dielectric deposition at RT, directly on the transfer-printed nanoribbons, is compatible with most flexible substrates. The performance of these FETs (mobility ≈656 cm 2 V −1 s −1 and on/off ratio >10 6 ) is on par with ...

show abstract