120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

Suzuki, Yoshishige; Yamazaki, Z.; Amamiya, Y.; Wada, S.; Uchida, Hiroaki; Kurioka, C.; Tanaka, Shin‐ichi; Hida, H.

doi:10.1109/jssc.2004.835647

Cited by 49 publications

(12 citation statements)

References 10 publications

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“…The performance of the overall system at 79 GHz strongly depends on the quality of the baseband PN-signal and it is quite challenging to integrate baseband together with high-frequency blocks. Recently, new techniques have been presented to improve the performance of flip-flops connected in a divider configuration [11,12]. Such techniques are based on asymmetric current levels in the reading and holding paths in each latch.…”

Section: A Transmittermentioning

confidence: 99%

SiGe Circuits for Spread Spectrum Automotive Radar

Trotta¹,

Dehlink

Knapp

et al. 2007

2007 IEEE International Conference on Ultra-Wideband

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-This paper presents circuits in SiGe bipolar technology for spread spectrum automotive radar applications in the band from 77 to 81 GHz. They cover the transmit and receive paths. The transmitter integrates a voltage controlled oscillator, a prescaler by 64, a 10 bit linear feedback shift register (LFSR), and a biphase modulator. The system has been optimized in order to achieve a range resolution less than 12 cm and an unambiguous range of 124 m. The quadrature receiver frontend consists of a single-ended low-noise amplifier (LNA), balancedto-unbalanced converters, two fully differential direct-conversion mixers, LO buffer amplifiers, and a branchline coupler for I/Q generation. The presented systems show that millimeter-wave circuits in SiGe technology can achieve high integration levels along with high performance. They are well suited for application in spread spectrum automotive radar systems.

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Section: A Transmittermentioning

confidence: 99%

SiGe Circuits for Spread Spectrum Automotive Radar

Trotta¹,

Dehlink

Knapp

et al. 2007

2007 IEEE International Conference on Ultra-Wideband

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“…InP/InGaAs Single Heterojunction Bipolar Transistors (SHBTs) have shown excellent characteristics which make them extremely attractive for high frequency applications [1,2]. For the next generation state-of-the-art devices, development tools are becoming increasingly necessary to fully characterise the physical phenomenon within a device.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors

Tauqeer

Sexton

Amir

et al. 2008

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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“…Previous demultiplexers and D-FFs working at or above 80 Gb/s include [1][2][3][4]. The work is motivated by the expectation that a 100-Gb/s Ethernet standard will eventually succeed 10 Gb/s in the Ethernet standard hierarchy [5].…”

Section: Introductionmentioning

confidence: 99%