120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

Khaouani, M.; Kourdi, Z.; Djannati, Z.; Taleb, S.; Bencherif, H.

doi:10.1016/j.optmat.2024.114846

Optical Materials

2024

DOI: 10.1016/j.optmat.2024.114846

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120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

M. Khaouani,

Z. Kourdi,

Z. Djannati

et al.

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Cited by 2 publications

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2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Labed,

Moon,

Kim

et al. 2024

ACS Nano

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Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-Ga 2 O 3 have significantly enhanced the functionality of electronic and optoelectronic devices, particularly in harsh environment conditions. However, some of these materials face challenges such as low thermal conductivity, limited P-type conductivity, and scalability issues, which can hinder device performance under extreme conditions like high temperature and irradiation. In this review paper, we explore the integration of various two-dimensional materials (2DMs) to address these challenges. These materials offer excellent properties such as high thermal conductivity, mechanical strength, and electrical properties. Notably, graphene, hexagonal boron nitride, transition metal dichalcogenides, 2D and quasi-2D Ga 2 O 3 , TeO 2 , and others are investigated for their potential in improving ultrawide bandgap semiconductor-based devices. We highlight the significant improvement observed in the device performance after the incorporation of 2D materials. By leveraging the properties of these materials, ultrawide bandgap semiconductor devices demonstrate enhanced functionality and resilience in harsh environmental conditions. This review provides valuable insights into the role of 2D materials in advancing the field of ultrawide bandgap semiconductors and highlights opportunities for further research and development in this area.

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2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Labed,

Moon,

Kim

et al. 2024

ACS Nano

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Investigation of electronic and optical properties of InAsSb/GaAs quantum well solar cell (QWSC)

Taleb,

Khaouani,

Lagraa

et al. 2024

SEES

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This paper provides a detailed theoretical analysis of a newly developed InAsSb/GaAs quantum well solar cell (QWSC). The study investigates how critical parameters, including the number and thickness of InAsxSb1-x quantum well (QW) layers, the GaAs barrier width, and operating temperature, affect the cell's electrical and optical characteristics. The performance metrics analyzed include current-voltage density (J-V), power-voltage (P-V), and external quantum efficiency (EQE). Results indicate that at 250 K, an optimal configuration of 20 quantum wells, each with a thickness of 4 nm, combined with a 60 nm barrier width, enhances the solar cell's performance significantly. This design achieves a 35.34% increase in short-circuit current and an 82.56% improvement in efficiency compared to a standard p-i-n solar cell. Additionally, the structure extends the absorption band for low-energy photons from 880 nm to 1000 nm. These findings underscore the potential of the proposed QWSC design in advancing photovoltaic technologies by improving efficiency and expanding spectral absorption capabilities, making it a promising candidate for next-generation solar cell applications.

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120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector

Cited by 2 publications

References 47 publications

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

2D Embedded Ultrawide Bandgap Devices for Extreme Environment Applications

Investigation of electronic and optical properties of InAsSb/GaAs quantum well solar cell (QWSC)

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