1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, Victor; McNutt, Ty; McCoy, M.; Hearne, Harold; Salvo, Gregory De; Clarke, Chris; Potyraj, Paul; Scozzie, Charles

doi:10.4028/www.scientific.net/msf.600-603.1047

Cited by 16 publications

(11 citation statements)

References 7 publications

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“…Unclamped inductive switching (UIS) testing is a common method to evaluate device breakdown characteristics. Avalanche energies of 20.4 mJ for a SiC 1200 V/5 A BJT, 350 mJ for a 1200 V SiC JFET in the cascode configuration, and 500 mJ for a 1200 V/20 A SiC DMOSFET, have been reported [4]- [6]. In the initial phase of this paper, single pulse UIS energy of 621 mJ was reported for a 1200 V/13 A SiC JFET at a gate voltage of −20 V [7].…”

mentioning

confidence: 76%

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Pushpakaran

Hinojosa

Bayne

et al. 2014

IEEE Trans. Plasma Sci.

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Silicon carbide (SiC) depletion mode junction field-effect transistors (JFETs) are well suited for pulsed power applications as an opening switch due to their normally ON (N-ON) nature. To assess the robustness and breakdown energy tolerance of JFETs under pulsed conditions, they must be evaluated for breakdown energy capability before failure. This is very important for circuit breaker applications due to the large voltage spikes induced during the opening of the circuit breaker while it still conducts substantial load current. These voltage spikes can drive the JFET into the breakdown voltage regime and may result in device failure if the energy dissipation is above the tolerance limit. To determine the maximum avalanche energy of the device under repetitive pulsed conditions, a N-ON SiC JFET with a nominal rating of 1200 V/13 A was driven into punchthrough breakdown using an unclamped inductive switching (UIS) circuit. The testing comprised of 4000 repetitive pulses at 25°C case temperature at a fixed gate voltage of −20 V. The drain current was increased after every 1000 pulses to increase the energy dissipated. The JFET was able to withstand 1000 pulses at a maximum energy dissipation value of 1160 mJ before failure. The JFET triode breakdown characteristics were analyzed after every 1000 pulses. The peak UIS energy of 1160 mJ corresponded to an energy density of 16.6 J/cm 2 based on their active area.Index Terms-1200 V, avalanche mode, depletion mode (DM), junction field-effect transistor (JFET), pulsed testing, silicon carbide (SiC), unclamped inductive switching (UIS).

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mentioning

confidence: 76%

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Pushpakaran

Hinojosa

Bayne

et al. 2014

IEEE Trans. Plasma Sci.

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“…Stephani et al reported on a lateral channel normally-on VJFET of 0.235 cm 2 active area, capable of blocking 1400 V with an associated specific on-state resistance of 10 mΩ cm 2 [12]. In this section, we present a normally-on 4H-SiC vertical-channel JFET with an active area of 0.143 cm 2 and a blocking-voltage capability of 1680 V [23,49,50]. These JFETs can be utilized as power switches with inherently safe normally-on gate-drive circuits [51].…”

Section: Thermal Properties Of Vjfet/cascodementioning

confidence: 93%

1200 V SiC vertical‐channel‐JFETs and cascode switches

Veliadis

2009

Physica Status Solidi (a)

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Wide band gap semiconductors like silicon carbide (SiC) are currently being developed for high power/temperature applications. Silicon carbide is ideally suited for power switching due to its high saturated drift velocity, its high critical field strength, its excellent thermal conductivity, and its mechanical strength. For power devices, the tenfold increase in critical field strength of SiC relative to Si allows high voltage blocking layers to be fabricated significantly thinner than those of comparable Si devices. This reduces device on‐state resistance and the associated conduction and switching losses, while maintaining the same high voltage blocking capability. The specific on‐state resistance of 4H‐SiC is approximately 400 times lower than that of Si at a given breakdown voltage. This allows for high current operation at relatively low forward voltage drop. In addition, the wide band gap of SiC allows operation at high temperatures where conventional Si devices fail. In this article, we will review Northrop Grumman's single‐implant no‐epitaxial‐regrowth vertical‐channel JFET. The feasibility of efficient 1200 V normally‐off VJFET operation will be investigated. The all‐SiC VJFET based cascode switch will be introduced and aspects of its operation evaluated. High temperature DC characteristics of VJFETs and 1200 V normally‐off cascode switches will be discussed. Finally, the development of large‐area high‐current 1200 V VJFETs and their edge termination performance will be presented. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In this paper, we focus on the static and dynamic voltage balancing of multiple SiC VJFETs in series while switching inductive loads. In particular, we investigate a particular type of VJFET, in which the channel is vertical as in [3], rather than lateral as in [4]. The difference is seen in the balance between the Miller capacitance and the drain-source capacitance, which effects mainly gate drive considerations during dynamic voltage blocking.…”

Section: Introductionmentioning

confidence: 99%

“…Thus absolute voltage ratings might increase, leading to attractive system advantages. Indeed 1200-1500 V vertical junction field effect transistors with robust performance and low on-resistance are now available [3][4]. The fabrication of such devices into modules in series combinations to multiply voltage ratings [5] and in parallel combinations to multiply current ratings [6] have been reported.…”

Section: Introductionmentioning

confidence: 99%

Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module

Mazzola

Gafford

Parker

et al. 2008

2008 IEEE International Power Modulators and High-Voltage Conference

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Silicon-carbide junction field-effect transistors (JFETs) are maturing in performance, reliability, and manufacturability, especially with voltage ratings ranging from 600-1800 V. The vertical channel JFET (VJFET) with extremely low specific on-resistance (< 0.25 Ω-mm 2 ) is now available. In this paper, new results are reported on a two-switch module packaged in a commercially available plastic half-bridge power module. The switches can handle steady currents up to 500 A, with at least 1 kA available before drain-current saturation occurs. Switching results with a diode-clamped inductive load are reported to investigate voltage sharing between the two series devices when switched simultaneously. The normally on characteristics of these JFET switches are ideal for current sources like charging of inductive loads.

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1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Cited by 16 publications

References 7 publications

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

1200 V SiC vertical‐channel‐JFETs and cascode switches

Inductive Switching with a 1-kA (Saturation) Normally on SiC JFET Switch Module

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